Публикации
Дата обновления: 07.12.2017
| Источник |
Импакт-фактор |
Описание публикаций |
Год |
Число цитирований |
DOI |
| Нет данных |
| FIZIKA TVERDOGO TELA |
— |
ELECTRO-ABSORPTION STUDY OF COUPLED EXCITONS IN ZNSE / SOKOLOV VI,KONSTANTINOV VL,MOSKVINA NA // FIZIKA TVERDOGO TELA. - 1980. - V. 22, l. 4. - P. 1199-1201.
|
1980 |
2 |
— |
| PHYSICA STATUS SOLIDI B-BASIC RESEARCH |
— |
EXPERIMENTAL-EVIDENCE OF ASYMMETRY OF THE BOUND EXCITON ABSORPTION-LINE IN GAP-N / SOKOLOV VI,CHERNYAEV VV // PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - 1980. - V. 98, l. 2. - P. 661-665.
|
1980 |
1 |
10.1002/pssb.2220980230
(полный текст)
|
| PHYSICA STATUS SOLIDI B-BASIC RESEARCH |
— |
DISCOVERY OF EXCITON-IMPURITY COMPLEXES IN ZINC SELENIDE BY ELECTROABSORPTION / SOKOLOV VI,MOSKVINA NA,MELNIKOV BV // PHYSICA STATUS SOLIDI B-BASIC RESEARCH. - 1978. - V. 90, l. 1. - P. K39-K42.
|
1978 |
4 |
10.1002/pssb.2220900159
(полный текст)
|
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
CONDUCTIVITY OF MODERATELY DOPED NORMAL-TYPE GE IN STRONG MAGNETIC-FIELDS / MATVEEV GA,SOKOLOV VI,TSIDILKOVSKII IM // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1975. - V. 8, l. 9. - P. 1150-1151.
|
1975 |
3 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
IMPURITY-BAND CONDUCTION IN N-TYPE GE SUBJECTED TO STRONG MAGNETIC-FIELDS / MATVEEV GA,SOKOLOV VI,TSIDILKOVSKII IM,SHELUSHININA NG // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1975. - V. 9, l. 9. - P. 1102-1105.
|
1975 |
2 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
— |
INFLUENCE OF NATURE OF DOPANT ON ANISOTROPY OF RELAXATION-TIME OF ELECTRONS IN HEAVILY DOPED GERMANIUM / MATVEEV GA,SOKOLOV VI // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1975. - V. 9, l. 5. - P. 624-625.
|
1975 |
0 |
— |
| SOVIET PHYSICS SEMICONDUCTORS-USSR |
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MAGNETORESISTANCE OF N-TYPE GE ON TRANSITION FROM IMPURITY TO BAND CONDUCTION / MATVEEV GA,SOKOLOV VI,TSIDILKOVSKII IM // SOVIET PHYSICS SEMICONDUCTORS-USSR. - 1974. - V. 8, l. 6. - P. 727-728.
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1974 |
0 |
— |
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