Kinetics of Precipitation and Growth of Thin Indium(III) Sulfide Films / Tulenin S. S.,Maskaeva L. N.,Markov V. F. // RUSSIAN JOURNAL OF GENERAL CHEMISTRY. - 2016. - V. 86, l. 8. - P. 1794-1799.

ISSN/EISSN:

1070-3632 / 1608-3350

Type:

Article

Abstract:

Thin films of indium(III) sulfide have been prepared by chemical precipitation from aqueous solutions containing indium(III) nitrate, thioacetamide, tartaric acid, and hydroxylamine hydrochloride at 333-368 K. Kinetics of In2S3 precipitation and the films growth under conditions of spontaneous formation of the solid phase in the solution has been studied. Formal rate law of indium(III) sulfide formation accounting for the partial orders of In2S3 precipitation with respect to the system components and the process activation energy has been derived. The effects of the reaction mixture composition, temperature, and the synthesis duration of In2S3 films growth have been studied.

Author keywords:

hydrochemical synthesis; indium(III) sulfide; formal kinetics; thin film CHEMICAL BATH; PHASE

DOI:

10.1134/S107036321608003X

Web of Science ID:

ISI:000386572500003

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1608-3350
Keywords-Plus	CHEMICAL BATH; PHASE
Research-Areas	Chemistry
Web-of-Science-Categories	Chemistry, Multidisciplinary
Author-Email	stast1989@mail.ru
Funding-Acknowledgement	Russian Foundation for Basic Research {[}14-03-00121]; Ministry of Education and Science of Russian Federation {[}4.1270.2014/K]
Funding-Text	This work was financially supported by the Russian Foundation for Basic Research (project no. 14-03-00121) and Ministry of Education and Science of Russian Federation in the frame of the governmental contract (no. 4.1270.2014/K).
Number-of-Cited-References	16
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	4
Journal-ISO	Russ. J. Gen. Chem.
Doc-Delivery-Number	EA4HQ