Low-temperature luminescence and thermoluminescence from BeO:Zn single crystals / Ogorodnikov I. N.,Petrenko M. D.,Ivanov V. Yu. // OPTICAL MATERIALS. - 2016. - V. 62, l. . - P. 219-226.

ISSN/EISSN:

0925-3467 / 1873-1252

Type:

Article

Abstract:

Low-temperature luminescence and thermoluminescence (TL) of BeO:Zn single crystals have been studied in the temperature range of 6-380 K and energy ranges of 1.2-6.5 eV (emission spectra) and 3.7 -20 eV (luminescence excitation and reflection spectra). The introduction of zinc impurity ions (0.05 at. \%) into BeO host lattice leads to the creation of both the trapped electron and hole centers: Zn+ and Zn2+ O-. These two new centers are responsible for two TL glow peaks at 307 and 145 K with activation energies of 0.96 and 0.40 eV, and two emission bands at 6.0 and 1.9-2.6 eV. The first emission band is attributed to radiative annihilation of the Zn-impurity bound excitons, and the second one is associated with the intracenter electronic transitions in the defect complex comprising zinc impurity ion. The 6.0 eV luminescence center can be excited at 9.6 eV, the low-energy tail of the BeO host absorption, but below the first excitonic maximum (10.45 eV). The 1.9-2.6 eV luminescence center can be excited at the BeO optical transparency band. Both emission bands in BeO:Zn appear in the X-ray induced luminescence spectra at T = 6 K. This indicates that not only these luminescence centers are excited during band-to band transitions, but they participate in recombination processes as well. The low-temperature (T-0 = 6 K) TL study of BeO:Zn single crystals was made for the first time. Analysis of the low temperature TL glow curves allowed us not only to experimentally determine the energy characteristics of the Zn impurity states in BeO:Zn, but reveal an extremely strong influence of the isovalent zinc impurity on fluctuation rearrangement of BeO host lattice. Note, the fluctuation rearrangement of BeO host lattice, which occurs in the temperature range of self-trapped exciton transformation (80-180 K), was previously known only for undoped BeO and BeO crystals with heterovalent impurities {[}I. N. Ogorodnikov and A. V. Kruzhalov, Proc. SPIE 2967 (1997) 42]. (C) 2016 Elsevier B.V. All rights reserved.

Author keywords:

Beryllium oxide crystals; Zn-impurity related defects; XRL and PL emission spectra; PL excitation spectra; Thermoluminescence BERYLLIUM-OXIDE; SYNCHROTRON-RADIATION; OPTICAL-PROPERTIES; GLOW CURVES; VACUUM-UV; SPECTROSCOPY; ULTRAVIOLET; CERAMICS; ENERGY; OSL

DOI:

10.1016/j.optmat.2016.10.009

Web of Science ID:

ISI:000390735400032

Соавторы в МНС:

Другие поля

Поле	Значение
Month	DEC
Publisher	ELSEVIER SCIENCE BV
Address	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
Language	English
EISSN	1873-1252
Keywords-Plus	BERYLLIUM-OXIDE; SYNCHROTRON-RADIATION; OPTICAL-PROPERTIES; GLOW CURVES; VACUUM-UV; SPECTROSCOPY; ULTRAVIOLET; CERAMICS; ENERGY; OSL
Research-Areas	Materials Science; Optics
Web-of-Science-Categories	Materials Science, Multidisciplinary; Optics
Author-Email	m.d.petrenko@gmail.com
ResearcherID-Numbers	Ogorodnikov, Igor/B-4162-2011
ORCID-Numbers	Ogorodnikov, Igor/0000-0002-4700-2340
Funding-Acknowledgement	Center of Excellence ``Radiation and Nuclear Technologies{''} (Competitiveness Enhancement Program of Ural Federal University, Russia)
Funding-Text	The authors are grateful to A.V. Kruzhalov, V.A. Pustovarov and I.N. Antsigin for collaboration, M.N. Sarychev for assistance with low-temperature measurements. All the examined BeO crystals were grown and kindly put at our disposal by V.A. Maslov. This work was partially supported by the Center of Excellence ``Radiation and Nuclear Technologies{''} (Competitiveness Enhancement Program of Ural Federal University, Russia).
Number-of-Cited-References	38
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	4
Journal-ISO	Opt. Mater.
Doc-Delivery-Number	EG0PT