Energy spectrum of electron trapping centers in CuInAsS3 / Zobov E. M.,Mollaev A. Yu.,Saipulaeva L. A.,Alibekov A. G.,Melnikova N. V. // PHYSICS OF THE SOLID STATE. - 2016. - V. 58, l. 12. - P. 2457-2459.

ISSN/EISSN:

1063-7834 / 1090-6460

Type:

Article

Abstract:

This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range E (C)-(0.14-0.35) eV.

Author keywords:

нет данных

DOI:

10.1134/S1063783416120362

Web of Science ID:

ISI:000390127700014

Соавторы в МНС:

—

Другие поля

Поле	Значение
Month	DEC
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6460
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	a.mollaev@mail.ru
ResearcherID-Numbers	Melnikova, Nina/B-1601-2014
Funding-Acknowledgement	Russian Foundation for Basic Research {[}16-02-00857]
Funding-Text	This study was supported by the Russian Foundation for Basic Research (project no. 16-02-00857).
Number-of-Cited-References	11
Usage-Count-Last-180-days	5
Usage-Count-Since-2013	5
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	EF2AW