High Conductivity in Molecularly p-Doped Diketopyrrolopyrrole-Based Polymer: The Impact of a High Dopant Strength and Good Structural Order / Karpov Yevhen,Erdmann Tim,Raguzin Ivan,Al-Hussein Mahmoud,Binner Marcus,Lappan Uwe,Stamm Manfred,Gerasimov Kirill L.,Beryozkina Tetyana,Bakulev Vasiliy,Anokhin Denis V.,Ivanov Dimitri A.,Guenther Florian,Gemming Sibylle,Seifert Gotthard,Voit Brigitte,Di Pietro Riccardo,Kiriy Anton // ADVANCED MATERIALS. - 2016. - V. 28, l. 28. - P. 6003+.

ISSN/EISSN:

0935-9648 / 1521-4095

Type:

Article

Abstract:

{[}3]-Radialene-based dopant CN6-CP studied herein, with its reduction potential of +0.8 versus Fc/Fc+ and the lowest unoccupied molecular orbital level of -5.87 eV, is the strongest molecular p-dopant reported in the open literature, so far. The efficient p-doping of the donor-acceptor dithienyl-diketopyrrolopyrrole-based copolymer having the highest unoccupied molecular orbital level of -5.49 eV is achieved. The doped films exhibit electrical conductivities up to 70 S cm(-1).

Author keywords:

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; CONJUGATED POLYMERS; ORGANIC SEMICONDUCTORS; HIGH-PERFORMANCE; CHARGE-TRANSFER; WAVE-FUNCTIONS; HIGH-MOBILITY; HOLE

DOI:

10.1002/adma.201506295

Web of Science ID:

ISI:000382400900029

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JUL 27
Publisher	WILEY-V C H VERLAG GMBH
Address	POSTFACH 101161, 69451 WEINHEIM, GERMANY
Language	English
EISSN	1521-4095
Keywords-Plus	FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; CONJUGATED POLYMERS; ORGANIC SEMICONDUCTORS; HIGH-PERFORMANCE; CHARGE-TRANSFER; WAVE-FUNCTIONS; HIGH-MOBILITY; HOLE
Research-Areas	Chemistry; Science \& Technology - Other Topics; Materials Science; Physics
Web-of-Science-Categories	Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience \& Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Author-Email	kiriy@ipfdd.de
ResearcherID-Numbers	Ivanov, Dimitri/D-6759-2013 Umlauf, Ursula/D-3356-2014 Voit, Brigitte/D-4755-2009 Anokhin, Denis/O-2524-2015 Seifert, Gotthard/M-1340-2017
ORCID-Numbers	Ivanov, Dimitri/0000-0002-5905-2652 Voit, Brigitte/0000-0002-4531-691X Anokhin, Denis/0000-0002-5997-2133
Funding-Acknowledgement	Deutsche Forschungsgemeinschaft, DFG {[}KI 1094/9-1]; German Excellence Initiative via the Cluster of Excellence ``Center for Advancing Electronics Dresden{''} (cfAED) {[}EXC 1056]; International Helmholtz Research School (IHRS) NanoNet; University of Jordan; Leibniz-Institut fur Polymerforschung, Dresden (IPF); Ministry of Education and Science of the Russian Federation {[}4.1626.2014/K, 14.604.21.0121 (RFMEFI60414x0121)]; RFBR {[}14-03-01033]
Funding-Text	Y.K. and T.E. contributed equally to this work. The authors gratefully acknowledge support from the Deutsche Forschungsgemeinschaft, DFG (grant KI 1094/9-1), German Excellence Initiative via the Cluster of Excellence EXC 1056 ``Center for Advancing Electronics Dresden{''} (cfAED), and International Helmholtz Research School (IHRS) NanoNet. M.A.H. thanks The University of Jordan and Leibniz-Institut fur Polymerforschung, Dresden (IPF) for financial support. T. Beryozkina thanks The Ministry of Education and Science of the Russian Federation (State task 4.1626.2014/K) for financial support. V. Bakulev thanks RFBR (14-03-01033) for financial support. Dimitri A. Ivanov, Denis V. Anokhin, and Kirill L. Gerasimov thank the Ministry of Education and Science of the Russian Federation for financial support (contract No 14.604.21.0121 (RFMEFI60414x0121)).
Number-of-Cited-References	41
Usage-Count-Last-180-days	16
Usage-Count-Since-2013	49
Journal-ISO	Adv. Mater.
Doc-Delivery-Number	DU7NJ