Energy spectrum of electron trapping centers in CuInAsS3 / Zobov E.M., Mollaev A.Y., Saipulaeva L.A., Alibekov A.G., Melnikova N.V. // Physics of the Solid State. - 2016. - V. 58, l. 12. - P. 2457-2459.

ISSN:

10637834

Type:

Article

Abstract:

This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS3 is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS3 demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range EC–(0.14–0.35) eV. © 2016, Pleiades Publishing, Ltd.

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Index keywords:

нет данных

DOI:

10.1134/S1063783416120362

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006351830&doi=10.1134%2fS1063783416120362&partnerID=40&md5=3d800f31cd0bf756bd417fa37cb14d11

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Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006351830&doi=10.1134%2fS1063783416120362&partnerID=40&md5=3d800f31cd0bf756bd417fa37cb14d11
Affiliations	Amirkhanov Institute of Physics, Dagestan Scientific Centre of the Russian Academy of Sciences, ul. Yagarskogo 94, Makhachkala, Republic of Dagestan, Russian Federation; Institute of Natural Science, Ural Federal University, ul. Kuibysheva 48, Yekaterinburg, Russian Federation
References	Kheifets, O.L., Kobelev, L.Y., Melnikova, N.V., Nugaeva, L.L., (2007) Tech. Phys., 52 (1), p. 86; Kheifets, O.L., Melnikova, N.V., Babushkin, A.N., (2007) Proceedings of the International Conference “Phase Transitions, Critical and Nonlinear Phenomena in Condensed Media,” Makhachkala, p. 334; Kheifets, O., Melnikova, N., Saipulaeva, L., Alibekov, A., Mollaev, A., Babushkin, A., Tikhomirova, G., (2009) High Pressure Res., 29 (2), p. 261; Melnikova, N.V., Alibekov, A.G., Saypulaeva, L.A., Kheifets, L., Babushkin, A.N., Mollaev, A.Y., Kallaev, S.N., Ferzaliev, R.M., (2011) Phys. Solid State, 53 (12), p. 2476; Gabibov, F.S., Zobov, E.M., Saipulaeva, L.A., Alibekov, A.G., Melnikova, N.V., Kheifets, O.L., (2015) Phys. Solid State, 57 (6), p. 1192; Ryvkin, S.M., (1963) Photoelectric Phenomena in Semiconductors; Vertoprakhov, V.N., Sal’man, E.G., (1979) Thermally Stimulated Currents in Inorganic Substances, , Nauka, Novosibirsk; Milns, A., (1977) Deep Impurities in Semiconductors; Electrets, Ed. by G. Sessler (Springer-Verlag, Heidelberg, 1980; Mir, Moscow, 1983), p. 430; Saipulaeva, L.A., Gabibov, F.S., Melnikova, N.V., Alibekov, A.G., Kheifets, O.L., Babushkin, A.N., Kurochka, K.V., (2012) J. Exp. Theor. Phys., 115 (5), p. 918; Gobrecht, H., Hofmann, D., (1966) Phys. Chem. Solids, 27, p. 509
Correspondence Address	Mollaev, A.Y.; Amirkhanov Institute of Physics, Dagestan Scientific Centre of the Russian Academy of Sciences, ul. Yagarskogo 94, Russian Federation; email: a.mollaev@mail.ru
Publisher	Maik Nauka-Interperiodica Publishing
Language of Original Document	English
Abbreviated Source Title	Phys. Solid State
Source	Scopus