Dielectric Permittivity Enhancement by Charged Domain Walls Formation in Stoichiometric Lithium Niobate / Esin A. A.,Akhmatkhanov A. R.,Shur V. Ya. // . - 2016. - V. 2016, l. . - P. 57-63.

ISSN/EISSN:

2519-1438 / нет данных

Type:

Proceedings Paper

Abstract:

We present an experimental study of contribution of charged domain walls into dielectric permittivity of lithium niobate. It has been shown that formation of dense structure with spike-like domains leads to order of magnitude increase of permittivity, which gradually decreases with time. The decrease rate accelerates under DC bias. Dielectric permittivity decreases linearly with a logarithm of frequency. The obtained results were explained considering vibration of the steps on the charged domain walls.

Author keywords:

dielectric relaxation; ferroelectrics; domain structure THIN-FILMS; CRYSTALS

DOI:

10.18502/kms.v1i1.563

Web of Science ID:

ISI:000395106000011

Соавторы в МНС:

Другие поля

Поле	Значение
Editor	Shur, VY
Booktitle	IV SINO-RUSSIAN ASRTU SYMPOSIUM ON ADVANCED MATERIALS AND PROCESSING TECHNOLOGY
Series	KnE Materials Science
Note	4th Sino-Russian ASRTU Symposium on Advanced Materials and Processing Technology, Ekaterinburg, RUSSIA, JUN 23-26, 2016
Organization	Assoc Sino Russian Tech Univ; Harbin Inst Technol; Bauman Moscow State Tech Univ; Ural Fed Univ; Pacific Natl Univ
Publisher	KNOWLEDGE E
Address	OFFICE 4402, X2 TOWER, JLT, PO BOX 488239, DUBAI, 00000, U ARAB EMIRATES
Language	English
Keywords-Plus	THIN-FILMS; CRYSTALS
Research-Areas	Engineering
Web-of-Science-Categories	Engineering, Industrial; Engineering, Manufacturing
Author-Email	alexander.esin@urfu.ru
ResearcherID-Numbers	Akhmatkhanov, Andrei/A-8072-2010 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Akhmatkhanov, Andrei/0000-0002-2802-9134
Number-of-Cited-References	14
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	1
Doc-Delivery-Number	BH0IB