Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics / Esin A. A.,Alikin D. O.,Turygin A. P.,Abramov A. S.,Hrescak J.,Walker J.,Rojac T.,Bencan A.,Malic B.,Kholkin A. L.,Shur V. Ya. // JOURNAL OF APPLIED PHYSICS. - 2017. - V. 121, l. 7.

ISSN/EISSN:

0021-8979 / 1089-7550

Type:

Article

Abstract:

The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such ``extrinsic{''} contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-10(6) Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials.

Author keywords:

LEAD-FREE PIEZOCERAMICS; THIN-FILMS; NIOBATE; PERMITTIVITY; CONSTANT; BATIO3; MODEL

DOI:

10.1063/1.4975341

Web of Science ID:

ISI:000395283700010

Соавторы в МНС:

Другие поля

Поле	Значение
Month	FEB 21
Publisher	AMER INST PHYSICS
Address	1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA
Language	English
Article-Number	074101
EISSN	1089-7550
Keywords-Plus	LEAD-FREE PIEZOCERAMICS; THIN-FILMS; NIOBATE; PERMITTIVITY; CONSTANT; BATIO3; MODEL
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	vladimir.shur@urfu.ru
ResearcherID-Numbers	Kholkin, Andrei/G-5834-2010 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Kholkin, Andrei/0000-0003-3432-7610 Turygin, Anton/0000-0002-4843-0662
Funding-Acknowledgement	Ministry of Education and Science of Russian Federation {[}UID RFMEFI58715X0022]
Funding-Text	The equipment of the Ural Center for Shared Use ``Modern Nanotechnology{''} UrFU has been used. The research was made possible by the Ministry of Education and Science of Russian Federation (UID RFMEFI58715X0022). The authors acknowledge E. L. Rumyantsev and M. Morozov for useful discussion.
Number-of-Cited-References	43
Usage-Count-Last-180-days	12
Usage-Count-Since-2013	12
Journal-ISO	J. Appl. Phys.
Doc-Delivery-Number	EM4LE