Dielectric relaxation and charged domain walls in (K,Na)NbO3-based ferroelectric ceramics / Esin A.A., Alikin D.O., Turygin A.P., Abramov A.S., Hreščak J., Walker J., Rojac T., Bencan A., Malic B., Kholkin A.L., Shur V.Ya. // Journal of Applied Physics. - 2017. - V. 121, l. 7.

ISSN:

00218979

Type:

Article

Abstract:

The influence of domain walls on the macroscopic properties of ferroelectric materials is a well known phenomenon. Commonly, such “extrinsic” contributions to dielectric permittivity are discussed in terms of domain wall displacements under external electric field. In this work, we report on a possible contribution of charged domain walls to low frequency (10-106 Hz) dielectric permittivity in K1-xNaxNbO3 ferroelectric ceramics. It is shown that the effective dielectric response increases with increasing domain wall density. The effect has been attributed to the Maxwell-Wagner-Sillars relaxation. The obtained results may open up possibilities for domain wall engineering in various ferroelectric materials. © 2017 Author(s).

Author keywords:

Index keywords:

Ceramic materials; Dielectric relaxation; Electric fields; Ferroelectric ceramics; Ferroelectric materials; Ferroelectricity; Niobium oxide; Permittivity; Sodium; Charged domain wall; Dielectric permi

DOI:

10.1063/1.4975341

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85013296224&doi=10.1063%2f1.4975341&partnerID=40&md5=51fc8a69ce1b3a2a311ceb1eafd5fa51

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Другие поля

Поле	Значение
Art. No.	074101
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85013296224&doi=10.1063%2f1.4975341&partnerID=40&md5=51fc8a69ce1b3a2a311ceb1eafd5fa51
Affiliations	Institute of Natural Sciences and Mathematics, Ural Federal University, Ekaterinburg, Russian Federation; Electronic Ceramics Department, Jožef Stefan Institute, Ljubljana, Slovenia; Materials Research Institute, Pennsylvania State University, University Park, PA, United States; Physics Department, CICECO-Aveiro Institute of Materials, University of Aveiro, Aveiro, Portugal
Funding Details	UID RFMEFI58715X0022, MES, Ministry of Education and Science
Funding Text	The equipment of the Ural Center for Shared Use “Modern Nanotechnology” UrFU has been used. The research was made possible by the Ministry of Education and Science of Russian Federation (UID RFMEFI58715X0022). The authors acknowledge E. L. Rumyantsev and M. Morozov for useful discussion.
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Publisher	American Institute of Physics Inc.
CODEN	JAPIA
Language of Original Document	English
Abbreviated Source Title	J Appl Phys
Source	Scopus