Features of formation of resistive states with abnormally small temperature coefficients of electrical resistance in the heterogeneous systems FeSi - FeSi2 / Kryuk V.V., Pilyugin A.V., Povzner A.A., Sachkov I.N. // Inzhenerno-Fizicheskii Zhurnal. - 2002. - V. 75, l. 3. - P. 171-174.

ISSN:

00210285

Type:

Article

Abstract:

An approach describing the influence of thermoelectric effects on the electrical resistance of the heterogeneous system metal-semiconductor is developed. The values of the parameters for which the minimum values of the temperature coefficient of resistance are realized are calculated using the heterogeneous system FeSi - FeSi2 as an example. It is shown that a marked influence on the electrical resistance in certain temperature intervals can be attained by creating temperature drops different in value at the specimen ends.

Author keywords:

Index keywords:

Electric resistance; Iron compounds; Parameter estimation; Semiconducting silicon compounds; Thermal effects; Thermoelectricity; Metal-semiconductor systems; Semiconductor metal boundaries

DOI:

нет данных

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036414785&partnerID=40&md5=4bc2dcc99a121253312d4e9a757262b9

Соавторы в МНС:

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Другие поля

Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0036414785&partnerID=40&md5=4bc2dcc99a121253312d4e9a757262b9
Affiliations	Ural State Technical Univ., Ekaterinburg, Russian Federation
Correspondence Address	Kryuk, V.V.; Ural State Technical Univ., Ekaterinburg, Russian Federation; email: ppupi@k-uralsk.ru
CODEN	INFZA
Language of Original Document	Russian
Abbreviated Source Title	Inzh Fiz Zh
Source	Scopus