| References |
Kharitonov, E.V., (1983) Dielektricheskie Materialy s Neodnorodnoi Strukturoi (Inhomogeneous-structure Dielectric Materials), , Moscow: Radio i Svyaz'; Hill, R., Electrical Transport in Thick Film Resistors (1980) Electrocomp. Sci. Technol., 6 (9), pp. 141-145; Sachkov, I.N., Povzner, A.A., Semiconductor-Metal Transition and Transport Behavior of FeSi-FeSi 2 Mixed-Phase Systems (1996) Fiz. Tverd. Tela, 38 (10), pp. 2969-2972. , S.-Peterburg; Saifullin, R.S., (1983) Neorganicheskie Kompozitsionnye Materialy (Inorganic Composite Materials), , Moscow: Khimiya; Kachurina, E.E., Myakinenkov, V.I., Shcheglova, V.V., Refractory Silicides in Semiconductor Technology, Part 2 (1982) Obz. Elektron. Tekh., Ser. 2: Poluprovodn Prib., (7-903); Vecherskii, S.I., Sidorenko, F.A., Electrical Conductivity of Si-Doped Barium Boromolybdate Glass (1992) Neorg. Mater., 28 (7), pp. 1461-1465; Gel'd, P.V., Sidorenko, F.A., (1971) Silitsidy Perekhodnykh Metallov Chetvertogo Perioda (First-row Transition-metal Silicides), , Moscow: Metallurgiya; Rogers, D.B., Shannon, R.D., Sleight, A.W., Gillson, J.L., Crystal Chemistry of Metal Dioxides with Rutile-Related Structures (1969) Inorg. Chem., 8 (4), pp. 841-849; Vecherskii, S.I., Sidorenko, F.A., Electrical Resistivity of FeSi 2-MoO 3-Glass Composites (1991) Poroshk. Metall. (Kiev), (9), pp. 43-47; Ambegaokar, V., Halperin, B., Langer, J., Hopping Conductivity in Disordered Systems (1971) Phys. Rev. B: Solid State, 4 (8), pp. 2612-2620; Rao, C.N.R., Gopalakrishnan, J., (1986) New Directions in Solid State Chemistry: Structure, Synthesis, Properties, Reactivity, and Materials Design, , Cambridge: Cambridge Univ. Press; Samsonov, G.V., Dvorina, L.A., Rud, B.M., (1979) Silitsidy (Silicides), , Moscow: Metallurgiya; Pike, G.E., Seager, C.H., Electrical Properties and Conduction Mechanisms of Ru-Based Thick-Film (Cermet) Resistors (1977) Appl. Phys., 17 (48), pp. 5152-5169. , 12 |