Conditions for formation of a zero temperature coefficient of resistance in matrix systems of metal-semiconductor / Andreeva A.G., Sachkov I.N., Povzner A.A. // Inzhenerno-Fizicheskii Zhurnal. - 2001. - V. 74, l. 1. - P. 153-155.

ISSN:

00210285

Type:

Article

Abstract:

Using the method of finite elements, the authors have calculated the parameters of a heterophase metal-semiconductor system for which the minimum temperature coefficients of resistance (TCRs) are realized. The temperature-concentration region in which the TCR acquires values approaching zero has been established.

Author keywords:

Index keywords:

Composition effects; Electric resistance; Finite element method; Parameter estimation; Semiconductor materials; Thermal effects; Metal-semiconductor systems; Metallic matrix composites

DOI:

нет данных

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035768717&partnerID=40&md5=2d334e658c730f745100c73eaa81bfdf

Соавторы в МНС:

Другие поля

Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035768717&partnerID=40&md5=2d334e658c730f745100c73eaa81bfdf
Affiliations	Ural State Technical Univ., Ekaterinburg, Russian Federation
Correspondence Address	Andreeva, A.G.; Ural State Technical Univ., Ekaterinburg, Russian Federation
CODEN	INFZA
Language of Original Document	Russian
Abbreviated Source Title	Inzh Fiz Zh
Source	Scopus