Formation of resistive properties of two-phase semiconductor-metal systems based on FeSi1+x with small deviations from stoichiometry / Povzner A.A., Andreeva A.G., Sachkov I.N., Kryuk V.V. // Technical Physics. - 2001. - V. 46, l. 8. - P. 1037-1039.

ISSN:
10637842
Type:
Article
Abstract:
Using the method of finite elements it has been found that in a two-phase system a semiconductor-metal concentrational transition takes place. Specific features of the dependence on concentration and temperature of the effective electrical conductivity in a FeSi-FeSi2 system are studied in the vicinity of critical concentrations. © 2001 MAIK "Nauka/Interperiodica".
Author keywords:
Index keywords:
нет данных
DOI:
10.1134/1.1395126
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Affiliations Ural State Technical University, Yekaterinburg, 620002, Russian Federation
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Correspondence Address Povzner, A.A.; Ural State Technical University, Yekaterinburg, 620002, Russian Federation
Language of Original Document English
Abbreviated Source Title Tech. Phys.
Source Scopus