Nonequilibrium phase transitions and S-shaped current-voltage characteristics in a model semiconductor-metal system / Melkikh A.V., Povzner A.A., Andreeva A.G., Sachkov I.N. // Technical Physics Letters. - 2001. - V. 27, l. 3. - P. 226-228.

ISSN:

10637850

Type:

Article

Abstract:

A model of nonequilibrium phase transition in a semiconductor-metal system was considered using a finite-element method. It is shown that, beginning with a certain fraction of the metal component in the heterophase system, the S-shaped current-voltage characteristics exhibit a change: the system features a hysteresis but possesses no singular points. © 2001 MAIK "Nauka/Interperiodica".

Author keywords:

Index keywords:

нет данных

DOI:

10.1134/1.1359835

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035531704&doi=10.1134%2f1.1359835&partnerID=40&md5=dc703f462ca130a02a45d08a66648002

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Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0035531704&doi=10.1134%2f1.1359835&partnerID=40&md5=dc703f462ca130a02a45d08a66648002
Affiliations	Ural State Technical University, Yekaterinburg, Russian Federation
References	Krotkus, A., Dobrovol'skis, Z., (1988) Electric Conductivity of Narrow-Bandgap Semiconductors, , Mokslas, Vilnius; Bonch-Bruevich, V.L., Zvyagin, I.P., Mironov, A.G., (1972) Domain Electrical Instabilities in Semiconductors, , Nauka, Moscow; Consultants Bureau, New York; Levinshteǐn, M.E., Pozhela, K.Yu., Shur, M.S., (1975) Gunn Effect, , Sov. Radio, Moscow; Segerlind, L., (1976) Applied Finite Element Analysis, , Wiley, New York; Mir, Moscow; Sachkov, I.N., (1996) Zh. Tekh. Fiz., 66 (12), p. 48. , Tech. Phys. 41, 1225 (1996); Merzhanov, A.G., Stolin, A.M., (1974) Prikl. Mekh. Tekh. Fiz., (1), p. 65
Correspondence Address	Melkikh, A.V.; Ural State Technical University, Yekaterinburg, Russian Federation
Language of Original Document	English
Abbreviated Source Title	Tech. Phys. Lett.
Source	Scopus