Topological instability of the ferroelectric domain wall caused by screening retardation / Udalov A. R.,Korzhenevskii A. L.,Shur V. Ya. // FERROELECTRICS. - 2017. - V. 508, l. 1. - P. 65-73.

ISSN/EISSN:

0015-0193 / 1563-5112

Type:

Article

Abstract:

In this paper, we established the origin of the experimentally observed topological instability representing the change of the plane domain wall shape by formation of so-called fingers during fast polarization reversal of the ferroelectric capacitor. By means of a simplified model we show that the topological instability of the domain wall can be attributed to retardation of the bulk screening of residual depolarization field.

Author keywords:

Domain wall; fast switching; screening retardation; shape instability LITHIUM TANTALATE; NIOBATE

DOI:

10.1080/00150193.2017.1288196

Web of Science ID:

ISI:000399740700009

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	TAYLOR \& FRANCIS LTD
Address	2-4 PARK SQUARE, MILTON PARK, ABINGDON OR14 4RN, OXON, ENGLAND
Language	English
EISSN	1563-5112
Keywords-Plus	LITHIUM TANTALATE; NIOBATE
Research-Areas	Materials Science; Physics
Web-of-Science-Categories	Materials Science, Multidisciplinary; Physics, Condensed Matter
Author-Email	artur.udalov@urfu.ru
ResearcherID-Numbers	Shur, Vladimir/J-9078-2015
Funding-Acknowledgement	Russian Scientific Foundation {[}14-12-00826]
Funding-Text	The research was made possible by Russian Scientific Foundation (Grant 14-12-00826).
Number-of-Cited-References	13
Journal-ISO	Ferroelectrics
Doc-Delivery-Number	ES7OV