Electrical properties and the structure changing of polycrystalline materials from the system Cu-As-Ge-S at high pressure / Zaikova V.,Melnikova N.,Tebenkov A.,Volkova Ya,Chubareshko E. // . - 2016. - V. 741, l. .

ISSN/EISSN:
1742-6588 / нет данных
Type:
Proceedings Paper
Abstract:
The results of experimental studies of magnetoresistance of polycrystalline materials (GeS)(1-x)(CuAsS2)(x) under high pressure ( up to 50 GPa) are presented. The appearance of large negative magnetoresistance was found. The structure changing during applying high pressures was studied.
Author keywords:
нет данных
DOI:
10.1088/1742-6596/741/1/012200
Web of Science ID:
ISI:000402314100200
Соавторы в МНС:
Другие поля
Поле Значение
Book-Group-Author IOP
Booktitle 3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016)
Series Journal of Physics Conference Series
Note 3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN), Russian Acad Sci, St Petersburg Acad Univ, St Petersburg, RUSSIA, MAR 28-30, 2016
Publisher IOP PUBLISHING LTD
Address DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
Language English
Article-Number UNSP 012200
Research-Areas Engineering; Optics; Physics
Web-of-Science-Categories Engineering, Electrical \& Electronic; Optics; Physics, Applied
ORCID-Numbers Tebenkov, Alexander/0000-0001-9721-0095
Funding-Acknowledgement Russian Foundation for Basic Research {[}16-02-00857-a]
Funding-Text This work was supported by the Russian Foundation for Basic Research, project No. 16-02-00857-a. The authors are grateful to Prof L.S. Dubrovinsky, University Bayreuth (Germany) for the possibility to conduct high pressure X-ray measurements.
Number-of-Cited-References 12
Doc-Delivery-Number BH7BI