Toward ferroelectric control of monolayer MoS2 / Nguyen A., Sharma P., Scott T., Preciado E., Klee V., Sun D., Lu I.-H., Barroso D., Kim S., Shur V.Y., Akhmatkhanov A.R., Gruverman A., Bartels L., Dowben P.A. // Nano Letters. - 2015. - V. 15, l. 5. - P. 3364-3369.

ISSN:
15306984
Type:
Article
Abstract:
The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized "up" with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the "up" domains, while slightly quenching the surface polarization on the "down" domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer. © 2015 American Chemical Society.
Author keywords:
CVD growth on oxides; ferroelectric surface polarization; selective area growth; transition metal dichalcogenides on ferroelectrics
Index keywords:
Chemical vapor deposition; Ferroelectricity; Film growth; Molybdenum compounds; Monolayers; Polarization; Scanning probe microscopy; Substrates; Transition metal compounds; Transition metals; Chemical
DOI:
10.1021/acs.nanolett.5b00687
Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84929192115&doi=10.1021%2facs.nanolett.5b00687&partnerID=40&md5=ee8ef9e73e79fa9f9f4b43b2a658ee9f
Соавторы в МНС:
Другие поля
Поле Значение
Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-84929192115&doi=10.1021%2facs.nanolett.5b00687&partnerID=40&md5=ee8ef9e73e79fa9f9f4b43b2a658ee9f
Affiliations Chemistry and Materials Science and Engineering Program, University of California, Riverside, CA, United States; Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 North 16th Street, Lincoln, NE, United States; Columbia University, 3000 Broadway, New York, NY, United States; Institute of Natural Sciences, Ural Federal University, Ekaterinburg, Russian Federation
Author Keywords CVD growth on oxides; ferroelectric surface polarization; selective area growth; transition metal dichalcogenides on ferroelectrics
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Correspondence Address Gruverman, A.; Department of Physics and Astronomy, Theodore Jorgensen Hall, University of Nebraska-Lincoln, 855 North 16th Street, United States
Publisher American Chemical Society
CODEN NALEF
Language of Original Document English
Abbreviated Source Title Nano Lett.
Source Scopus