Influence of Semiconductor Thickness and Molecular Weight on the Charge Transport of a Naphthalenediimide-Based Copolymer in Thin-Film Transistors / Karpov Y., Zhao W., Raguzin I., Beryozkina T., Bakulev V., Al-Hussein M., Häußler L., Stamm M., Voit B., Facchetti A., Tkachov R., Kiriy A. // ACS Applied Materials and Interfaces. - 2015. - V. 7, l. 23. - P. 12478-12487.

ISSN:
19448244
Type:
Review
Abstract:
The N-type semiconducting polymer, P(NDI2OD-T2), with different molecular weights (MW = 23, 72, and 250 kg/mol) was used for the fabrication of field-effect transistors (FETs) with different semiconductor layer thicknesses. FETs with semiconductor layer thicknesses from ∼15 to 50 nm exhibit similar electron mobilities (μ's) of 0.2-0.45 cm2 V-1 s-1. Reduction of the active film thickness led to decreased values; however, FETs with ∼2 and ∼5 nm thick P(NDI2OD-T2) films still exhibit substantial μs of 0.01-0.02 and ∼10-4 cm2 V-1 s-1, respectively. Interestingly, the lowest molecular weight sample (P-23, MW ≈ 23 kg/mol, polydispersity index (PDI) = 1.9) exhibited higher the highest molecular weight sample (P-250, MW ≈ 250 kg/mol, PDI = 2.3) measured for thicker devices (15-50 nm). This is rather unusual behavior because typically charge carrier mobility increases with MW where improved grain-to-grain connectivity usually enhances transport events. We attribute this result to the high crystallinity of the lowest MW sample, as confirmed by differential scanning calorimetry and X-ray diffraction studies, which may (over)compensate for other effects. © 2015 American Chemical Society.
Author keywords:
crystallinity; electron mobility; morphology; semiconducting polymer; thin-film transistor
Index keywords:
Copolymers; Differential scanning calorimetry; Electron mobility; Film thickness; Molecular weight; Morphology; Polydispersity; Semiconducting organic compounds; Semiconducting polymers; Thin film tra
DOI:
10.1021/am507759u
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Affiliations Leibniz-Institut für Polymerforschung Dresden E.V., Hohe Straße 6, Dresden, Germany; Polyera Corporation, Skokie, IL, United States; Ural Federal University, Mira Street 28, Yekaterinburg, Russian Federation; Center for Advancing Electronics Dresden (CFAED), Technische Universität Dresden, Dresden, Germany; Physics Department, University of Jordan, Amman, Jordan; Center of Excellence for Advanced Materials Research (CEAMR), King Abdulaziz University, P.O. Box 80203, Jeddah, Saudi Arabia
Author Keywords crystallinity; electron mobility; morphology; semiconducting polymer; thin-film transistor
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Correspondence Address Facchetti, A.; Polyera CorporationUnited States
Publisher American Chemical Society
Language of Original Document English
Abbreviated Source Title ACS Appl. Mater. Interfaces
Source Scopus