Influence of irradiation on the switching behavior in PZT thin films / Baturin I., Menou N., Shur V., Muller C., Kuznetsov D., Hodeau J.-L., Sternberg A. // Materials Science and Engineering B: Solid-State Materials for Advanced Technology. - 2005. - V. 120, l. 1-3. - P. 141-145.

ISSN:
09215107
Type:
Conference Paper
Abstract:
Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol-gel Pb(Zr,Ti)O3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on the switching current shape. The obtained effects have been explained as a result of acceleration of the bulk screening process induced by irradiation. It was shown that the spatial distribution of the internal bias field is determined by the domain structure existing during irradiation. The changes in the structural characteristics during fatigue cycling have been reveled by high resolution synchrotron X-ray diffraction experiments on (1 1 1)-oriented PZT-based capacitors with a composition in the morphotropic region. From both ex situ and in situ measurements, microstructural changes with cyclic switching during fatigue have been evidenced and correlated with the evolution of the switching characteristics. © 2005 Published by Elsevier B.V.
Author keywords:
Electric properties; Ferroelectrics; PZT; Structural properties; Thin films; X-ray irradiation
Index keywords:
Correlation methods; Electric properties; Microstructure; Neutron irradiation; Screening; Sol-gels; Thin films; X ray diffraction; PZT thin films; Structural properties; Switching behavior; X-ray irra
DOI:
10.1016/j.mseb.2005.02.024
Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-18944397621&doi=10.1016%2fj.mseb.2005.02.024&partnerID=40&md5=a5884d93ee1dbe7eb7827f5a88d3d1c3
Соавторы в МНС:
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Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-18944397621&doi=10.1016%2fj.mseb.2005.02.024&partnerID=40&md5=a5884d93ee1dbe7eb7827f5a88d3d1c3
Affiliations Ferroelectric Laboratory, Ural State University, 51 Lenin Ave., 620083 Ekaterinburg, Russian Federation; L2MP - UMR CNRS 6137, Université du Sud Toulon Var, BP 20132, F-83957 La Garde, France; Laboratoire de Cristallographie - CNRS, BP 166, 38042 Grenoble Cedex, France; Institute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063 Riga, Latvia
Author Keywords Electric properties; Ferroelectrics; PZT; Structural properties; Thin films; X-ray irradiation
References Tagantsev, A.K., Stolichnov, I., Colla, E.L., Setter, N., (2001) J. Appl. Phys., 90, p. 1387; Scott, J.F., (2000) Ferroelectric Memories, , Springer Berlin, Heidelberg; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2001) J. Appl. Phys., 90, p. 6312; Shur, V.Ya., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Bolten, D., Lohse, O., Waser, R., (2001) MRS Sym. Proc., 655; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2002) Phys. Solid State, 44, p. 2145; Dawber, M., Scott, J.F., (2000) Appl. Phys. Lett., 76, p. 1060; Scott, J.F., Dawber, M., (2000) Appl. Phys. Lett., 76, p. 3801; Colla, E.L., Hong, S., Taylor, D.V., Tagantsev, A.K., Setter, N., No, K., (1998) Appl. Phys. Lett., 72, p. 2763; Kimura, S., Izumi, K., Tatsumi, T., (2001) Appl. Phys. Lett., 80, p. 2365; Liu, M., Hsia, K.J., (2003) Appl. Phys. Lett., 83, p. 3978; Thompson, C., Munkholm, A., Streiffer, S.K., Stephenson, G.B., Ghosh, K., Eastman, J.A., Auciello, O., Eom, C.B., (2001) Appl. Phys. Lett., 78, p. 5511; Jona, F., Shirane, G., (1962) Ferroelectric Crystals, , Pergamon New York; Chynoweth, A.G., (1959) Phys. Rev., 113, p. 159; Scott, J.F., Araujo, C.A., Meadows, H.B., McMillan, L.D., Shawabkeh, A., (1989) J. Appl. Phys., 66, p. 1444; Fridkin, V.M., (1979) Photoferroelectrics, , Springer Berlin; Shur, V.Ya., (1996) Ferroelectric Thin Films: Synthesis and Basic Properties, 10. , Gordon and Breach New York; Shur, V.Ya., Baturin, I.S., Shishkin, E.I., Belousova, M.V., (2003) Ferroelectrics, 291, p. 27; Shur, V.Ya., Baturin, I.S., Shishkin, E.I., Belousova, M.V., (2003) Integr. Ferroelectr., 53, p. 379; Ozgul, M., Takemura, K., Trolier-McKinstry, S., Randall, C.A., (2001) J. Appl. Phys., 89, p. 5100
Correspondence Address Baturin, I.; Ferroelectric Laboratory, Ural State University, 51 Lenin Ave., 620083 Ekaterinburg, Russian Federation; email: ivan@labfer.usu.ru
Editors Fejer M.M.Fousek J.Ishibashi Y.Sawada A.Scott J.F.
Conference name The 8th International Symposium on Ferroic Domains (ISFD-8, 2004)
Conference code 64791
CODEN MSBTE
Language of Original Document English
Abbreviated Source Title Mater Sci Eng B Solid State Adv Technol
Source Scopus