Polarization fatigue in Pb Zr 0.45 Ti 0.55 O 3 -based capacitors studied from high resolution synchrotron x-ray diffraction / Menou N., Muller Ch., Baturin I.S., Shur V.Ya., Hodeau J.-L. // Journal of Applied Physics. - 2005. - V. 97, l. 6.

ISSN:

00218979

Type:

Article

Abstract:

High resolution synchrotron x-ray diffraction experiments were performed on (111)-oriented Pb Zr0.45 Ti0.55 O3 -based capacitors with a composition in the morphotropic region. Diffraction analyzes were done after bipolar pulses were applied and removed, representing several places in the cyclic switching. Microstructural changes were evidenced from relative diffracted intensities variations of several Bragg reflections and a correlation with the evolution of the ferroelectric responses has been established. First, a peculiar microstructural evolution was observed during the first 3× 104 switching cycles and was attributed to the so-called "wake-up" effect. On the other hand, the onset of the fatigue phenomenon was accompanied by significant variations on integrated diffraction intensities. Several mechanisms are proposed and discussed to explain such variations. Finally, the ferroelectric responses were analyzed after x-ray diffraction experiments and compared with those measured before exposure. A detailed analysis has shown that both domain configuration and switching process are strongly influenced by x-ray irradiation. It can be considered that x rays act as a "revealer" of the domain structure created during the preceding electrical treatment. © 2005 American Institute of Physics.

Author keywords:

Index keywords:

Bragg reflections; Depolarization fields; Ferroelectric responses; Hysteresis loops; Capacitors; Crystal lattices; Ferroelectric materials; Hysteresis; Irradiation; Lead compounds; Light reflection; M

DOI:

10.1063/1.1870098

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-20644440003&doi=10.1063%2f1.1870098&partnerID=40&md5=9656662c9d54220544ad2028e0e804fe

Соавторы в МНС:

Другие поля

Поле	Значение
Art. No.	064108
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-20644440003&doi=10.1063%2f1.1870098&partnerID=40&md5=9656662c9d54220544ad2028e0e804fe
Affiliations	Laboratoire Mat́riaux et Micrólectronique de Provence (L2MP), UMR CNRS 6137, Universit́ du Sud Toulon Var, BP 20132, F-83957 La Garde Cedex, France; Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083 Ekaterinburg, Russian Federation; Laboratoire de Cristallographie, BP 166, F-38042 Grenoble Cedex 9, France
References	Scott, J.F., Paz De Araujo, C.A., (1989) Science, 246, p. 1400; Paz De Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M.C., Scott, J.F., (1995) Nature (London), 374, p. 627; Warren, W.L., Dimos, D., Tuttle, B.A., Nasby, R.D., Pike, G.E., (1994) Appl. Phys. Lett., 65, p. 1018; Colla, E.L., Taylor, D.V., Tagantsev, A.K., Setter, N., (1998) Appl. Phys. Lett., 72, p. 2478; Tagantsev, A.K., Stolichnov, I., Colla, E.L., Setter, N., (2001) J. Appl. Phys., 90, p. 1387; Reszat, J.-T., Glazounov, A.E., Hoffmann, M.J., (2001) J. Eur. Ceram. Soc., 21, p. 1349; Glazounov, A.E., Hoffmann, M.J., (2001) J. Eur. Ceram. Soc., 21, p. 1417; Liu, M., Hsia, K.J., (2003) Appl. Phys. Lett., 83, p. 3978; Kimura, S., Izumi, K., Tatsumi, T., (2001) Appl. Phys. Lett., 80, p. 2365; Shur, V.Ya., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Bolten, D., Lohse, O., Waser, R., (2001) Mater. Res. Soc. Symp. Proc., 655, p. 1081; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2001) J. Appl. Phys., 90, p. 6312; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2002) Phys. Solid State, 44, p. 2145; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Ozgul, M., Randall, C.A., (2001) Integr. Ferroelectr., 33, p. 117; Shur, V.Ya., Baturin, I.S., Shishkin, E.I., Belousova, M.V., (2003) Ferroelectrics, 291, p. 27; Shur, V.Ya., Baturin, I.S., Shishkin, E.I., Belousova, M.V., (2003) Integr. Ferroelectr., 53, p. 379; Roisnel, T., Rodriguez-Carvajal, J., (2001) Mater. Sci. Forum, 378-381, p. 118; Ozgul, M., Takemura, K., Trolier-Mckinstry, S., Randall, C.A., (2001) J. Appl. Phys., 89, p. 5100; Durbin, M.K., Jacobs, E.W., Hicks, J.C., Park, S.-E., (1999) Appl. Phys. Lett., 74, p. 2848; Durbin, M.K., Hicks, J.C., Park, S.-E., Shrout, T.R., (2000) J. Appl. Phys., 87, p. 8159; Noheda, B., Cox, D.E., Shirane, G., Park, S.-E., Cross, L.E., Zhong, Z., (2001) Phys. Rev. Lett., 86, p. 3891; Ye, Z.-G., Noheda, B., Dong, M., Cox, D.E., Shirane, G., (2001) Phys. Rev. B, 64, p. 184114; Ke-Pi, C., Xiao-Wen, Z., Hao-Su, L., (2002) J. Phys.: Condens. Matter, 14, p. 571; Bedoya, C., Muller, Ch., Baudour, J.-L., Madigou, V., Anne, M., Roubin, M., (2000) Mater. Sci. Eng., B, 75, p. 43; Lines, M.E., Glass, A.M., (1979) Principles and Applications of Ferroelectrics and Related Materials, , Clarendon, Oxford; Chynoweth, A.G., (1959) Phys. Rev., 113, p. 159; Scott, J.F., Araujo, C.A., Meadows, H.B., McMillan, L.D., Shawabkeh, A., (1989) J. Appl. Phys., 66, p. 1444; Menou, N., Castagnos, A.-M., Muller, Ch., Johnson, J., Wouters, D.J., Baturin, I., Shur, V.Ya., (2004) Integr. Ferroelectr., 61, p. 89; Kholkin, A.L., Iakovlev, S.O., Baptista, J.L., (2001) Appl. Phys. Lett., 79, p. 2055
Correspondence Address	Menou, N.; Laboratoire Mat́riaux et Micrólectronique de Provence (L2MP), UMR CNRS 6137, Universit́ du Sud Toulon Var, BP 20132, F-83957 La Garde Cedex, France
CODEN	JAPIA
Language of Original Document	English
Abbreviated Source Title	J Appl Phys
Source	Scopus