Evolution of bias field and offset piezoelectric coefficient in bulk lead zirconate titanate with fatigue / Zhang Y., Baturin I.S., Aulbach E., Lupascu D.C., Kholkin A.L., Shur V.Ya., Rödel J. // Applied Physics Letters. - 2005. - V. 86, l. 1. - P. 012910-1-012910-3.

ISSN:

00036951

Type:

Article

Abstract:

Hysteresis loops of the piezoelectric coefficient, d33 =f (E3), are measured on virgin and fatigued lead zirconate titanate ceramics. Four parameters are directly extracted from the measurements: internal bias field Eb, offset piezoelectric coefficient doffset, coercive field Ec, and remnant piezoelectric coefficient dr. The reduction in dr displays the decreasing switchable polarization with fatigue cycling. Eb and doffset are found to be linearly related. After thermal annealing, both offsets disappear, while the increase in Ec and the reduction in dr withstand annealing. The microscopic entities responsible for the offsets are less stable than those for reduced switching. © 2005 American Institute of Physics.

Author keywords:

Index keywords:

Annealing; Atomic force microscopy; Ceramic materials; Coercive force; Electric fields; Electrodes; Electrostriction; Fatigue of materials; Grain boundaries; Lead compounds; Microstructure; Permittivi

DOI:

10.1063/1.1847712

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-19744383907&doi=10.1063%2f1.1847712&partnerID=40&md5=fe0eda63fe0397b3b19260116216ab0a

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Другие поля

Поле	Значение
Art. No.	012910
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-19744383907&doi=10.1063%2f1.1847712&partnerID=40&md5=fe0eda63fe0397b3b19260116216ab0a
Affiliations	Institute of Materials Science, Darmstadt University of Technology, 64287 Darmstadt, Germany; Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; Dept. of Ceramics and Glass Eng., CICECO, University of Aveiro, 3810-193 Aveiro, Portugal
References	Lupascu, D.C., (2004) Fatigue in Ferroelectric Ceramics and Related Issues, , Springer, Heidelberg; Warren, W.L., Dimos, D., Tuttle, B.A., Pike, G.E., Schwartz, R.W., Clews, P.J., McIntyre, D.C., (1995) J. Appl. Phys., 77, p. 6695; Pan, W.Y., Yue, C.F., Tosyali, O., (1992) J. Am. Ceram. Soc., 75, p. 1534; Kholkin, A.L., Colla, E.L., Tagantsev, A.K., Taylor, D.V., Setter, N., (1996) Appl. Phys. Lett., 68, p. 2577; Colla, E.L., Kholkin, A.L., Taylor, D., Tagantsev, A.K., Brooks, K.G., Setter, N., (1995) Microelectron. Eng., 29, p. 145; Lines, M.E., Glass, A.M., (1977) Principles and Applications of Ferroelectrics and Related Materials, , Clarendon, Oxford; Tagantsev, A.K., Stolichnov, I., Colla, E.L., Setter, N., (2001) J. Appl. Phys., 90, p. 1387; Ricinschi, D., Okuyama, M., (2002) Appl. Phys. Lett., 81, p. 4040; Nuffer, J., Lupascu, D.C., Rödel, J., (2000) Acta Mater., 48, p. 3783; Colla, E.L., Hong, S., Taylor, D.V., Tagantsev, A.K., Setter, N., No, K., (1998) Appl. Phys. Lett., 72, p. 2763; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2001) J. Appl. Phys., 90, p. 6312; Arlt, G., Calderwood, J.H., (2002) Appl. Phys. Lett., 81, p. 2605; Nuffer, J., Lupascu, D.C., Rödel, J., (2002) Appl. Phys. Lett., 80, p. 1049
Correspondence Address	Lupascu, D.C.; Institute of Materials Science, Darmstadt University of Technology, 64287 Darmstadt, Germany; email: lupascu@ceramics.tu-darmstadt.de
CODEN	APPLA
Language of Original Document	English
Abbreviated Source Title	Appl Phys Lett
Source	Scopus