Failure analysis of FeCAPs. Electrical behaviour under synchrotron X-ray irradiation / Menou N., Castagnos A.-M., Muller Ch., Johnson J., Wouters D.J., Baturin I., Shur V.Ya. // Integrated Ferroelectrics. - 2004. - V. 61, l. . - P. 89-95.

ISSN:
10584587
Type:
Article
Abstract:
This paper presents a preliminary study of the degradation and restoration of ferroelectric properties under X-ray irradiation of Pt/SBT/Pt ferroelectric capacitors (FeCAP) and the degradation in Pt/PZT/Pt FeCAPs. The results seem to point out that aging of irradiated capacitors originates from the pinning of domain walls due to trapping of photo-generated carriers at domain boundaries. For SBT FeCAPs, the recovery of a significant switchable polarisation after electrical cycling under X-ray irradiation indicates that the domain walls are probably weakly pinned. In PZT FeCAPs, the fatigue behaviour during X-ray exposure can be explained as a result of X-ray induced acceleration of the bulk screening process due to increasing of the concentration of bulk carriers, which leads to both static and kinetic imprint effects.
Author keywords:
Failure analysis; Ferroelectric capacitors; PZT and SBT; Synchrotron; X-ray radiation hardness
Index keywords:
Charge carriers; Failure analysis; Ferroelectric materials; Irradiation; Polarization; Synchrotrons; Ferroelectric capacitors (FeCAP); Ferroelectric properties; PZT and SBT; X ray irradiation; Capacit
DOI:
10.1080/10584580490458784
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https://www.scopus.com/inward/record.uri?eid=2-s2.0-13744255388&doi=10.1080%2f10584580490458784&partnerID=40&md5=efe168757e9ae4e387578ceec2df55c8
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Affiliations L2MP, Laboratoire Matériaux et Microélectronique de Provence, Université Toulon-Var, BP 132, F-83957 La Garde Cedex, France; IMEC, Kapeldreef 75, B-3001 Leuven, Belgium; Institute of Physics and Applied Mathematics, Ural State University, Lenin Ave. 51, 620083 Ekaterinburg, Russian Federation
Author Keywords Failure analysis; Ferroelectric capacitors; PZT and SBT; Synchrotron; X-ray radiation hardness
References Scott, J.F., (2000) Ferroelectric Memories, , Berlin, Springer; Johnson, J.A., Lisoni, J.G., Wouters, D.J., (2003) Microelectronic Engineering, , in press; Grossmann, M., Bolten, D., Lohse, O., Boettger, U., Waser, R., Tiedke, S., (2000) Appl. Phys. Lett., 77, pp. 1894-1896; Shur, V.Ya., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Bolten, D., Lohse, O., Waser, R., (2001) MRS Sym. Proc., 655, pp. CC10.8.1-CC10.8.6; Kholkin, A.L., Iakovlev, S.O., Baptista, J.L., (2001) Appl. Phys. Lett., 79 (13), pp. 2055-2057; Al-Shareef, H.N., Dimos, D., Boyle, T.J., Warren, W.L., Tuttle, B.A., (1996) Appl. Phys. Lett., 68, pp. 690-692; Zhang, Z., Zhu, Z., Song, C., Yan, F., Wang, Y., (2001) Ferroelectrics, 251, pp. 37-44; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2001) J. Appl. Phys., 90, pp. 6312-6315; Warren, W.L., Dimos, D., Tuttle, B.A., Nasby, R.D., Pike, G.E., (1994) Appl. Phys. Lett., 65, pp. 1018-1020
Correspondence Address Muller, Ch.; L2MP, Laboratoire Matériaux et Microélectronique de Provence, Université Toulon-Var, BP 132, F-83957 La Garde Cedex, France; email: muller@univ-tln.fr
CODEN IFERE
Language of Original Document English
Abbreviated Source Title Integr Ferroelectr
Source Scopus