New approach to analysis of the switching current data, recorded during conventional hysteresis measurements / Shur V.Ya., Baturin I.S., Shishkin E.I., Belousova M.V. // Integrated Ferroelectrics. - 2003. - V. 53, l. . - P. 379-390.

ISSN:
10584587
Type:
Article
Abstract:
The explanation of fatigue as a spatially non-uniform kinetic imprint due to evolution of the local threshold field distribution function has been proposed by us recently. In this paper we propose a new switching current analysis which allows to extract the distribution function from the data of conventional hysteresis loop measurements. Domain kinetics in slow-increasing field in spatially inhomogeneous ferroelectric was investigated by computer simulation. Domain arising and growth were considered under assumption that the threshold field for appearance of isolated nuclei is essentially higher than for nuclei at the domain wall. The obtained approach essentially differs from Preisach one. The proposed method has been applied for analysis of the switching current data measured during fatigue cycling in PZT and PLZT thin films. The fitting formula for dependence of switching charge and current maximum on the cycle number has been proposed and successively used for experimental data. The proposed method can accelerate the fatigue testing.
Author keywords:
Fatigue; Ferroelectric thin films; PLZT; PZT; Switching current analysis
Index keywords:
Computer simulation; Ferroelectric devices; Ferroelectric thin films; Magnetic hysteresis; Switching circuits; Field distribution function; Hysteresis loop; Kinetic imprint; Switching current analysis
DOI:
10.1080/10584580390258327
Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-13744258954&doi=10.1080%2f10584580390258327&partnerID=40&md5=274c078dd06c1b753ceb997d28d166ef
Соавторы в МНС:
Другие поля
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Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-13744258954&doi=10.1080%2f10584580390258327&partnerID=40&md5=274c078dd06c1b753ceb997d28d166ef
Affiliations Ural State University, Institute of Physics and Applied Mathematics, 51 Lenin Ave., Ekaterinburg, Russian Federation
Author Keywords Fatigue; Ferroelectric thin films; PLZT; PZT; Switching current analysis
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Correspondence Address Shur, V.Ya.; Ural State University, Institute of Physics and Applied Mathematics, 51 Lenin Ave., Ekaterinburg, Russian Federation
CODEN IFERE
Language of Original Document English
Abbreviated Source Title Integr Ferroelectr
Source Scopus