New approach to analysis of the switching current data in ferroelectric thin films / Shur V.Ya., Baturin I.S., Shishkin E.I., Belousova M.V. // Ferroelectrics. - 2003. - V. 291, l. . - P. 27-35.

ISSN:

00150193

Type:

Conference Paper

Abstract:

A new approach to analysis of the switching current allows to extract distribution function of the threshold field from the current data recorded during conventional hysteresis loop measurements. Quasi-static switching (domain kinetics in slow-increasing field) in spatially inhomogeneous ferroelectric was investigated by computer simulation. Domain arising ("nucleation") and growth was considered under the assumption that the threshold field for appearance of isolated nuclei is essentially higher than for nuclei at the domain wall. The obtained complicated relation between switching current shape and the threshold field distribution function essentially differs from predictions of Preisach approach. The new method has been successively used for analysis of the switching current data measured during cycling in PLZT thin films.

Author keywords:

Internal bias field; Preisach approach; Switching current; Thin films

Index keywords:

Crystal growth; Data reduction; Magnetic domains; Magnetic hysteresis; Switching; Thin films; Domain wall; Internal bias field; Preisach approach; Switching current; Ferroelectric materials

DOI:

10.1080/00150190390222510

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-13744250409&doi=10.1080%2f00150190390222510&partnerID=40&md5=651ff48517d2dbcc18fee96d29bc5df0

Соавторы в МНС:

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Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-13744250409&doi=10.1080%2f00150190390222510&partnerID=40&md5=651ff48517d2dbcc18fee96d29bc5df0
Affiliations	Inst. Phys. and Appl. Math., Ural State University, 620083 Ekaterinburg, Russian Federation
Author Keywords	Internal bias field; Preisach approach; Switching current; Thin films
References	Scott, J.F., (2000) Ferroelectric Memories, , Springer, Berlin, Heidelberg; Merz, W.J., (1956) J. Appl. Phys., 27, p. 938; Fatuzzo, E., Meiz, W.J., (1967) Ferroelectricity, p. 201. , North-Holland Publishing Com., Amsterdam; Kolmogorov, A.N., (1937) Izv. Acad. Nauk USSR., Ser Math., 3, p. 355; Avrami, M., (1939) J. Chem. Phys., 7, p. 1103; Avrami, M., (1940) J. Chem. Phys., 8, p. 212; Avrami, M., (1941) J. Chem. Phys., 9, p. 177; Ishibashi, Y., Takagi, Y., (1971) J. Phys. Soc. Jap., 31, p. 506; Shur, V.Ya., Rumyantsev, E.L., Makarov, S.D., (1998) J. Appl. Phys., 84, p. 445; Preisach, F., (1935) Z. Phys., 94, p. 277; Turik, A.V., (1963) Sov. Phys. Solid State, 5, p. 885; Robert, G., Damjanovic, D., Setter, N., (2000) Appl. Phys. Lett., 77, p. 4413; Bartic, A.T., Wouters, D.J., Maes, H.E., Rickes, J.T., Waser, R.M., (2001) J. Appl. Phys., 89, p. 3420; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2001) J. Appl. Phys., 90, p. 6312; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Ozgul, M., Randall, C.A., (2001) Integrated Ferroelectrics, 33, p. 117; Shur, V.Ya., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Bolten, D., Lohse, O., Waser, R., (2001) MRS Sym. Proc., 655, pp. CC10.8.1; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., (2002) Phys. Solid State, 44, p. 2145
Correspondence Address	Shur, V.Ya.; Inst. Phys. and Appl. Math., Ural State University, 620083 Ekaterinburg, Russian Federation
CODEN	FEROA
Language of Original Document	English
Abbreviated Source Title	Ferroelectrics
Source	Scopus