Fatigue in PZT thin films / Shur V., Nikolaeva E., Shishkln E., Baturin I., Bolten D., Lohse O., Waser R. // Materials Research Society Symposium - Proceedings. - 2001. - V. 655, l. . - P. XLXXXV-XLXXXVI.

ISSN:
02729172
Type:
Article
Abstract:
We have used the new approach to fatigue phenomenon for analysis of the switching current and C-V characteristic evolution during cycling in PZT thin films. It was shown that in accordance with theoretical predictions the rejuvenation stage precedes the fatigue one. We have demonstrated that fatigue behavior corresponds to the spreading of the internal bias field distribution function during ac switching. © 2001 Materials Research Society.
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Affiliations Institute of Physics and Applied Mathematics, Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russian Federation; Institut fuer Werkstoffe der Elektrotechnik, RWTH Aachen, D-52056 Aachen, Germany
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Correspondence Address Shur, V.; Institute of Physics and Applied Mathematics, Ural State University, 51 Lenin Ave., Ekaterinburg 620083, Russian Federation
CODEN MRSPD
Language of Original Document English
Abbreviated Source Title Mater Res Soc Symp Proc
Source Scopus