References |
Duiker, H., Beale, P., Scott, J., Paz De Araujo, C., Melnick, B., Cuchiaro, J., McMillan, L., (1990) J.Appl.Phys., 68, p. 5783; Lee, J., Esayan, S., Safari, A., Ramesh, R., (1994) Appl.Phys.Lett., 65, p. 254; Colla, E., Taylor, D., Tagantsev, A., Setter, N., (1998) Appl.Phys.Lett., 72, p. 2478; Stolichnov, I., Tagantsev, A., Colla, E., Setter, N., (1998) Appl.Phys.Lett., 73, p. 1361; Shur, V.Ya., Makarov, S.D., Ponomarev, N.Yu., Sorkin, I.L., Nikolaeva, E.V., Shishkin, E.I., Suslov, L.A., Kluenkov, E.V., (1998) J.Kor.Phys.Soc., 32, pp. S1714; Scott, J.F., Dawber, M., (2000) Appl.Phys.Lett., 76, p. 3801; Grossmann, M., Bolten, D., Lohse, O., Boettger, U., Waser, R., Tiedke, S., (2000) Appl.Phys.Lett., 77, p. 1894; Colla, E., Hong, S., Taylor, D., Tagantsev, A., Setter, N., No, K., (1998) Appl.Phys.Lett., 72, p. 2763; Gruverman, A., Auciello, O., Tokumoto, H., (1996) Appl.Phys.Lett., 69, p. 3191; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Ozgul, M., Randall, C.A., (2001) Integrated Ferroelectrics, 33, p. 117; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Appl.Phys.Lett., , in press; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Baturin, I.S., Kalinina, M.V., Appl.Phys.Lett., , to be published; Fridkin, V.M., (1980) Ferroelectrics Semiconductors, , Consultants Bureau, New York and London; Shur, V.Ya., (1996) Ferroelectric Thin Films: Synthesis and Basic Properties, 10, p. 153. , eds. C. A. Paz de Araujo, J. F. Scott, G. W. Taylor Gordon and Breach, New York; Lambeck, P.V., Jonker, G.H., (1978) Ferroelectrics, 22, p. 729 |