Kinetics of fatigue effect / Shur V.Ya., Rumyantsev E.L., Nikolaeva E.V., Shishkin E.I., Baturin I.S., Ozgul M., Randall C.A. // Integrated Ferroelectrics. - 2001. - V. 33, l. 1-4. - P. 1169/117-1183/132.

ISSN:
10584587
Type:
Conference Paper
Abstract:
We propose and confirm by computer simulation that the kinetics of fatigue phenomenon during ac switching is due to evolution of spatial distribution of bias field. Arising and growth of frozen domains as a result of self-organized domain kinetics is studied. The simulated fatigue behavior is in accord with experimental data obtained during cyclic switching using triangular and rectangular field pulses in PZT films and PZN-PT single crystals.
Author keywords:
Cyclic switching; Domain structure; Fatigue; Single crystals; Thin films
Index keywords:
Computer simulation; Crystal structure; Electric field effects; Fatigue of materials; Ferroelectric materials; Kinetic theory; Lead compounds; Single crystals; Cyclic switching; Domain structure; Fati
DOI:
нет данных
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Affiliations Inst. Phys. and Appl. Math., Ural State University, Lenin Ave. 51, Ekaterinburg, 620083, Russian Federation; Material Research Lab., Pennsylvania State University, University Park, PA 16802-4800, United States
Author Keywords Cyclic switching; Domain structure; Fatigue; Single crystals; Thin films
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Correspondence Address Shur, V.Ya.; Inst. Phys. and Appl. Math., Ural State University, Lenin Ave. 51, 620083 Ekaterinburg, Russian Federation; email: vladimir.shur@usu.ru
Conference name 12th International Symposium on Integrated Ferroelectrics
Conference date 12 March 2000 through 15 March 2000
Conference location Aachen
Conference code 58077
CODEN IFERE
Language of Original Document English
Abbreviated Source Title Integr Ferroelectr
Source Scopus