Ferroelectric domain triggers the charge modulation in semiconductors (invited) / Morozovska A.N., Eliseev E.A., Ievlev A.V., Varenyk O.V., Pusenkova A.S., Chu Y.-H., Shur V.Y., Strikha M.V., Kalinin S.V. // Journal of Applied Physics. - 2014. - V. 116, l. 6.

ISSN:

00218979

Type:

Article

Abstract:

We consider a typical heterostructure "domain patterned ferroelectric film - ultra-thin dielectric layer - semiconductor," where the semiconductor can be an electrolyte, paraelectric or multi-layered graphene. Unexpectedly, we have found that the space charge modulation profile and amplitude in the semiconductor, that screens the spontaneous polarization of a 180-deg domain structure of ferroelectric, depends on the domain structure period, dielectric layer thickness and semiconductor screening radius in a rather non-trivial nonlinear way. Multiple size effects appearance and manifestation are defined by the relationship between these three parameters. In addition, we show that the concept of effective gap can be introduced in a simple way only for a single-domain limit. Obtained analytical results open the way for understanding of current-AFM maps of contaminated ferroelectric surfaces in ambient atmosphere as well as explore the possibilities of conductivity control in ultra-thin semiconductor layers. © 2014 AIP Publishing LLC.

Author keywords:

Index keywords:

Ferroelectric films; Ferroelectric materials; Modulation; Ambient atmosphere; Analytical results; Charge modulation; Ferroelectric domains; Ferroelectric surfaces; Multi-layered graphene; Semiconducto

DOI:

10.1063/1.4891310

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906309082&doi=10.1063%2f1.4891310&partnerID=40&md5=3237d564d5e662030f3899a339d93a5b

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Поле	Значение
Art. No.	066817
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84906309082&doi=10.1063%2f1.4891310&partnerID=40&md5=3237d564d5e662030f3899a339d93a5b
Affiliations	Institute of Physics, National Academy of Sciences of Ukraine, 46, pr. Nauky, 03028 Kyiv, Ukraine; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41, pr. Nauky, 03028 Kyiv, Ukraine; Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 3, Krjijanovskogo, 03142 Kyiv, Ukraine; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States; Ural Federal University, 51, Lenina Ave, 620000 Ekaterinburg, Russian Federation; Radiophysical Faculty, Taras Shevchenko Kyiv National University, 4, pr. Akademika Hlushkova, 03022 Kyiv, Ukraine; Physics Faculty, Taras Shevchenko Kyiv National University, 4, pr. Akademika Hlushkova, 03022 Kyiv, Ukraine; Department of Material Science and Engineering, National Chiao-Tung University, Hsinchu, Taiwan; Institute of Physics, Academia Sinica, Taipei 105, Taiwan
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Publisher	American Institute of Physics Inc.
CODEN	JAPIA
Language of Original Document	English
Abbreviated Source Title	J Appl Phys
Source	Scopus