Finite size and intrinsic field effect on the polar-active properties of ferroelectric-semiconductor heterostructures / Morozovska A.N., Eliseev E.A., Svechnikov S.V., Krutov A.D., Shur V.Y., Borisevich A.Y., Maksymovych P., Kalinin S.V. // Physical Review B - Condensed Matter and Materials Physics. - 2010. - V. 81, l. 20.

ISSN:

10980121

Type:

Article

Abstract:

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization, and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin films. The role of the polarization gradient and intrinsic surface energy, interface dipoles, and free charges on polarization dynamics are specifically explored. The intrinsic field effects, which originated at the ferroelectric-semiconductor interface, lead to the surface band bending and result into the formation of depletion space-charge layer near the semiconductor surface. During the local polarization reversal (caused by the electric field of the nanosized tip of the scanning probe microscope) the thickness and charge of the interface layer drastically changes, in particular, the sign of the screening carriers is determined by the polarization direction. Obtained analytical solutions could be extended to analyze polarization-mediated electronic transport. © 2010 The American Physical Society.

Author keywords:

Index keywords:

нет данных

DOI:

10.1103/PhysRevB.81.205308

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955749891&doi=10.1103%2fPhysRevB.81.205308&partnerID=40&md5=1d250253c99948dd0336d51006dbc2df

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Art. No.	205308
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-77955749891&doi=10.1103%2fPhysRevB.81.205308&partnerID=40&md5=1d250253c99948dd0336d51006dbc2df
Affiliations	Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kiev, Ukraine; Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, 03142 Kiev, Ukraine; Taras Shevchenko National University of Kyiv, 01033 Kiev, Ukraine; Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russian Federation; Oak Ridge National Laboratory, Oak Ridge, TN 37831, United States
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Correspondence Address	Morozovska, A. N.; Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kiev, Ukraine; email: morozo@i.com.ua
CODEN	PRBMD
Language of Original Document	English
Abbreviated Source Title	Phys. Rev. B Condens. Matter Mater. Phys.
Source	Scopus