Rearrangement of ferroelectric domain structure induced by chemical etching / Shur V.Ya., Lobov A.I., Shur A.G., Kurimura S., Nomura Y., Terabe K., Liu X.Y., Kitamura K. // Applied Physics Letters. - 2005. - V. 87, l. 2.

ISSN:
00036951
Type:
Article
Abstract:
The rearrangement of the domain structure induced by chemical etching has been observed in periodically poled MgO-doped stoichiometric lithium tantalate single crystals. Topographic and piezoresponse scanning probe microscopy have been used for measuring the etching relief height and domain wall position after etching. The considerable shift of the domain wall during etching by pure hydrofluoric acid has been revealed by analysis of the experimental data. We have found that the wall motion proceeded after the termination of the etching procedure. We have shown that the whole consequence of the domain wall positions during etching is recorded in the etching relief height and can be extracted with high spatial and temporal resolution. © 2005 American Institute of Physics.
Author keywords:
Index keywords:
Chemical etching; Domain structure; Piezoresponse; Scanning probe microscopy; Etching; Magnesia; Microscopic examination; Surface topography; Ferroelectricity
DOI:
10.1063/1.1993769
Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-24144465927&doi=10.1063%2f1.1993769&partnerID=40&md5=ce9f45ab6ecc947ee9fb6a830da2589c
Соавторы в МНС:
Другие поля
Поле Значение
Art. No. 022905
Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-24144465927&doi=10.1063%2f1.1993769&partnerID=40&md5=ce9f45ab6ecc947ee9fb6a830da2589c
Affiliations Center for Shared Use Scanning Probe Microscopy, Ural State University, Ekaterinburg 620083, Russian Federation; National Institute for Materials Science, Tsukuba 305-0044, Japan
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Correspondence Address Shur, V.Ya.; Center for Shared Use Scanning Probe Microscopy, Ural State University, Ekaterinburg 620083, Russian Federation; email: vladimir.shur@usu.ru
CODEN APPLA
Language of Original Document English
Abbreviated Source Title Appl Phys Lett
Source Scopus