Polarization reversal in congruent and stoichiometric lithium tantalate / Shur V.Ya., Nikolaeva E.V., Shishkin E.I., Kozhevnikov V.L., Chernykh A.P., Terabe K., Kitamura K. // Applied Physics Letters. - 2001. - V. 79, l. 19. - P. 3146-3148.

ISSN:

00036951

Type:

Article

Abstract:

Switching kinetics has been compared in congruent (CLT) and stoichiometric (SLT) lithium tantalate by simultaneous recording of instantaneous domain patterns and switching current. A mechanism of fast domain kinetics in CLT driven by domain merging was revealed. The important information about the domain kinetics has been obtained by the statistical analysis of current noise in SLT. A model of jerky domain wall motion is proposed. © 2001 American Institute of Physics.

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DOI:

10.1063/1.1416471

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https://www.scopus.com/inward/record.uri?eid=2-s2.0-0013245812&doi=10.1063%2f1.1416471&partnerID=40&md5=e0d4f41d3af2b8f6a348daba77437038

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Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0013245812&doi=10.1063%2f1.1416471&partnerID=40&md5=e0d4f41d3af2b8f6a348daba77437038
Affiliations	Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; Natl. Inst. for Materials Science, 1-1, Namiki, Tsukuba, 305, Japan
References	Byer, R., (1997) J. Nonlinear Opt. Phys. & Mater., 6, p. 549; Rosenman, G., Skliar, A., Arie, A., (1999) Ferroelectr. Rev., 1, p. 263; Yamada, M., Saitoh, M., Ooki, H., (1996) Appl. Phys. Lett., 69, p. 3659; Batchko, R., Shur, V., Fejer, M., Byer, R., (1999) Appl. Phys. Lett., 75, p. 1673; Kitamura, K., Furukawa, Y., Niwa, K., Gopalan, V., Mitchell, T., (1998) Appl. Phys. Lett., 73, p. 3073; Gopalan, V., Mitchell, T., (1999) J. Appl. Phys., 85, p. 2304; Furukawa, Y., Kitamura, K., Suzuki, E., Niwa, K., (1999) J. Cryst. Growth, 197, p. 889; Shur, V., Rumyantsev, E., Makarov, S., (1998) J. Appl. Phys., 84, p. 445; Shur, V., Rumyanstev, E., Nikolaeva, E., Shiskin, E., Fursov, D., Batchko, R., Eyres, L., Sindel, J., (2001) Ferroelectrics, 253, p. 105; Shur, V., Rumyantsev, E., Nikolaeva, E., Shishkin, E., Fursov, D., Batchko, R., Eyres, L., Byer, R., (2000) Appl. Phys. Lett., 76, p. 143; Shur, V., Rumyantsev, E., Nikolaeva, E., Shishkin, E., (2000) Appl. Phys. Lett., 77, p. 3636; Myers, L., (1995), Ph.D. thesis, Stanford University; Russ, J., (1994) Fractal Surfaces, p. 112. , Plenum, New York; Feder, J., (1988) Fractals, p. 181. , Plenum, New York; Hasmy, A., Foret, M., Pelous, J., Jullien, R., (1993) Phys. Rev. B, 48, p. 9345; Drougard, M., Landauer, R., (1959) J. Appl. Phys., 30, p. 1663; Shur, V., Rumyantsev, E., Kuminov, V., Subbotin, A., Nikolaeva, E., (1999) Phys. Solid State, 41, p. 112; Shur, V.Y., (1996) Ferroelectric Thin Films: Synthesis and Basic Properties, , Gordon and Breach, New York, Chap. 6; Alessandro, B., Beatrice, C., Bertotti, G., Montorsi, A., (1990) J. Appl. Phys., 68, p. 2908; Fridkin, V., (1980) Ferroelectrics Semiconductors, , Consultants Bureau, New York; Robels, U., Arlt, G., (1993) J. Appl. Phys., 73, p. 3454; Lambeck, P., Jonker, G., (1986) J. Phys. Chem. Solids, 47, p. 453; Stolichnov, I., Tagantsev, A., Setter, N., Cross, J., Tsukada, M., (1999) Appl. Phys. Lett., 74, p. 3552
Correspondence Address	Shur, V.Ya.; Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; email: vladimir.shur@usu.ru
CODEN	APPLA
Language of Original Document	English
Abbreviated Source Title	Appl Phys Lett
Source	Scopus