Nanoscale backswitched domain patterning in lithium niobate / Shur V.Ya., Rumyantsev E.L., Nikolaeva E.V., Shishkin E.I., Fursov D.V., Batchko R.G., Eyres L.A., Fejer M.M., Byer R.L. // Applied Physics Letters. - 2000. - V. 76, l. 2. - P. 143-145.

ISSN:

00036951

Type:

Article

Abstract:

We demonstrate a promising method of nanoscale domain engineering, which allows us to fabricate regular nanoscale domain patterns consisting of strictly oriented arrays of nanodomains (diameter down to 30 nm and density up to 100/μm-2) in lithium niobate. We produce submicron domain patterns through multiplication of the domain spatial frequency as compared with the electrode one. The fabrication techniques are based on controlled backswitched poling. © 2000 American Institute of Physics.

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Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0001456535&partnerID=40&md5=c5a05407d09d19a8de3c1a02ee77af34
Affiliations	Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; E.L. Ginzton Laboratory, Stanford University, Stanford, CA 94305, United States
References	Yamada, M., Saitoh, M., Ooki, H., (1996) Appl. Phys. Lett., 69, p. 3659; Feng, D., Ming, N.B., Hong, J.F., Yang, Y.S., Zhu, J.S., Yang, Z., Wang, Y.N., (1980) Appl. Phys. Lett., 37, p. 607; Ming, N.B., Hong, J.F., Feng, D., (1982) J. Mater. Sci., 17, p. 1663; Feisst, A., Koidl, P., (1985) Appl. Phys. Lett., 47, p. 1125; Byer, R.L., (1997) J. Nonlinear Opt. Phys. Mater., 6, p. 549; Burr, K.C., Tang, C.L., Arbore, M.A., Fejer, M.M., (1997) Appl. Phys. Lett., 70, p. 3341; Prokhorov, A.M., Kuzminov, Y.S., (1990) Physics and Chemistry of Crystalline Lithium Niobate, p. 263. , Adam Hilger, Bristol; Yamada, M., Nada, N., Saitoh, M., Watanabe, K., (1993) Appl. Phys. Lett., 62, p. 435; Myers, L.E., Eckardt, R.C., Fejer, M.M., Byer, R.L., Bosenberg, W.R., (1996) Opt. Lett., 21, p. 591; Miller, G.D., Batchko, R.G., Fejer, M.M., Byer, R.L., (1996) Proc. SPIE, 2700, p. 34; Shur, V.Ya., Batchko, R.G., Rumyantsev, E.L., Miller, G.D., Fejer, M.M., Byer, R.L., (1999) Proc. 11th ISAF, p. 399. , Piscataway, IEEE, NJ; Shur, V., Rumyantsev, E., Batchko, R., Miller, G., Fejer, M., Byer, R., (1999) Ferroelectrics, 221, p. 157; Batchko, R.G., Shur, V.Ya., Fejer, M.M., Byer, R.L., (1999) Appl. Phys. Lett., 75, p. 1673; Shur, V.Ya., Rumyantsev, E.L., Batchko, R.G., Miller, G.D., Fejer, M.M., Byer, R.L., (1999) Phys. Solid State, 41, p. 1681; Shur, V.Ya., Rumyantsev, E.L., Nikolaeva, E.V., Shishkin, E.I., Batchko, R.G., Eyres, L.A., Fejer, M.M., Byer, R.L., Phys. Rev. Lett., , in press; Shur, V.Ya., Nikolaeva, E.V., Rumyantsev, E.L., Shishkin, E.I., Subbotin, A.L., Kozhevnikov, V.L., (1999) Ferroelectrics, 222, p. 323; Shur, V.Ya., Gruverman, A.L., Ponomarev, N.Yu., Tonkachyova, N.A., (1992) Ferroelectrics, 126, p. 371
Correspondence Address	Shur, V.Ya.; Inst. of Phys. and Appl. Mathematics, Ural State University, Ekaterinburg 620083, Russian Federation; email: vladimir.shur@usu.ru
CODEN	APPLA
Language of Original Document	English
Abbreviated Source Title	Appl Phys Lett
Source	Scopus