Switching kinetics in normal and relaxor ferroelectrics: PZT thin films and PLZT ceramics / Shur Vladimir // IEEE International Symposium on Applications of Ferroelectrics. - 1996. - V. 1, l. . - P. 233-240.

ISSN:
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Type:
Conference Paper
Abstract:
The switching process in normal and relaxor ferroelectrics was described as a result of evolution of domain structure. The original mathematical treatment allows to extract the main kinetic parameters from switching current and elastic light scattering data measured under the action of field pulses. Specific of domain kinetics in ferroelectric thin films and relaxor ceramics was demonstrated. The scenario of evolution of heterophase structure in relaxors during `switching' and spontaneous `backswitching' is proposed.
Author keywords:
Index keywords:
Ceramic materials; Laser pulses; Light scattering; Mathematical techniques; Semiconducting lead compounds; Semiconductor device structures; Switching; Thin films; Ferroelectric thin films; Lead lantha
DOI:
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Смотреть в Scopus:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030350817&partnerID=40&md5=91f3cfd095693e30ad809aacadee45cc
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Поле Значение
Link https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030350817&partnerID=40&md5=91f3cfd095693e30ad809aacadee45cc
Affiliations Ural State Univ, Ekaterinburg, Russian Federation
Correspondence Address Shur, Vladimir; Ural State Univ, Ekaterinburg, Russian Federation
Editors Kulwicki B.M.Amin A.Safari A.
Sponsors IEEE
Publisher IEEE, Piscataway, NJ, United States
Conference name Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
Conference date 18 August 1996 through 21 August 1996
Conference location East Brunswick, NJ, USA
Conference code 46681
CODEN 00213
Language of Original Document English
Abbreviated Source Title IEEE Int Symp Appl Ferroelectr
Source Scopus