Synthesis and Properties of the Ternary Phase Ti3SiC2 / Kellerman D.G., Gorshkov V.S., Blinovskov Ya.N., Grigorov I.G., Perelyaev V.A., Shveikin G.P. // Inorganic Materials. - 1997. - V. 33, l. 3. - P. 271-274.

ISSN:

00201685

Type:

Article

Abstract:

Ti3SiC2 can be prepared in vacuum from both elements and binary compounds. This carbosilicide is found to be stable up to 1600 K in vacuum. The microstructure of Ti3SiC2 materials obtained by hot pressing at different temperatures is studied by electron microscopy.

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Поле	Значение
Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-0004514117&partnerID=40&md5=6b6d2de627f73a2399b88bf7f46c8817
Affiliations	Institute of Solid-State Chemistry, Ural Division, Russian Academy of Sciences, ul. Pervomaiskaya 91, Yekaterinburg, 620219, Russian Federation
References	Pumpuch, R., Lis, J., Stobierski, L., Tymkiewicz, M., Solid Combustion Synthesis of Ti3SiC2 (1989) J. Eur. Ceram. Soc., 5, pp. 283-287; Nickl, J.J., Schweitzer, K.K., Luxenberg, P., Gasphasevabscheidung in System Ti-Si-C (1972) J. Less-Common Met., 26 (3), pp. 335-353; Lis, J., Pumpuch, R., Piekarczyk, J., Stobierski, L., New Ceramics Based on Ti3SiC2 (1993) Ceram. Int., 19, pp. 219-222; Gyarmali, E., Ahladas, P., Naoumidis, A., Nickel, H., Preparation and Study of the Ternary Ti3SiC2 Phase for Joining SiC (1993) Proc. 13th Int. Plansee Seminar, 2, pp. 631-646. , Reutte; Goto, T., Hirai, T., Chemically Vapor Deposited Ti3SiC2 (1987) Mater. Res. Bull., 22, pp. 1195-1201; Jeitschko, W., Novotny, H., Die Kristallstmktur von Ti3SiC2 - Ein neuer komplex carbid Typ (1967) Mh. Chem., 98, pp. 329-337; Shaffer, P.T.B., A Review of the Structure of Silicon Carbide (1969) Acta Crystallogr., Sect. B: Struct. Sci., 25, pp. 477-488
Correspondence Address	Kellerman, D.G.; Institute of Solid-State Chemistry, Ural Division, Russian Academy of Sciences, ul. Pervomaiskaya 91, Yekaterinburg, 620219, Russian Federation
CODEN	INOMA
Language of Original Document	English
Abbreviated Source Title	Inorg. Mater.
Source	Scopus