Afterglow in bulk AlN single crystals under β-irradiation / Vokhmintsev A.S., Weinstein I.A., Spiridonov D.M. // Journal of Luminescence. - 2012. - V. 132, l. 8. - P. 2109-2113.

ISSN:
00222313
Type:
Review
Abstract:
Regularities of afterglow at room temperature and of thermoluminescence at further heating up to 673 K have been studied in bulk aluminum nitride single crystals. It has been established that after exposure to β-irradiation luminescence decay at RT may be described by superposition of two exponential components: fast (59 s) and slow (606 s) ones, caused by defects of the anion crystal sublattice O N- and V N-centers, respectively. The afterglow spectrum is shown to be characterized by the 3.43 eV band with FWHM=0.61 eV that dominates also in the thermoluminescence under study. From analysis of the TL curves in terms of the general order formalism it has been concluded that variation of the activation energy observed within the 0.46-0.85 eV range with increasing storage of the samples from 5 min to 3 days may be caused by energy distribution of traps on the basis of oxygen-related centers. For the first time the compensation effect has been found, and phenomenologically interpreted for the TL processes of the AlN single crystals. Isokinetic temperature has been estimated within the framework of empiric and non-empiric relations. © 2012 Elsevier B.V. All rights reserved.
Author keywords:
Aluminum nitride; Compensation effect; Fading; Isokinetic temperature; Oxygen-related centers; Thermoluminescence
Index keywords:
AlN single crystals; Bulk AlN; Compensation effects; Energy distribution of trap; Exponential components; Fading; Heating up; Iso-kinetic temperature; Luminescence decays; Oxygen-related centers; Room
DOI:
10.1016/j.jlumin.2012.03.066
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https://www.scopus.com/inward/record.uri?eid=2-s2.0-84859641067&doi=10.1016%2fj.jlumin.2012.03.066&partnerID=40&md5=6dde3a33842b5364cf8bc5c7b7345350
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Affiliations Ural Federal University, Research and Education Center - Nanomaterials and Nanotechnologies, Mira Street, 19, Ekaterinburg 620002, Russian Federation
Author Keywords Aluminum nitride; Compensation effect; Fading; Isokinetic temperature; Oxygen-related centers; Thermoluminescence
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Correspondence Address Vokhmintsev, A.S.; Ural Federal University, Research and Education Center - Nanomaterials and Nanotechnologies, Mira Street, 19, Ekaterinburg 620002, Russian Federation; email: a.s.vokhmintsev@ustu.ru
CODEN JLUMA
Language of Original Document English
Abbreviated Source Title J Lumin
Source Scopus