Specific features of the dislocation structure of layered titanium dichalcogenides TiX2 (X = S, Se, or Te) / Galieva E.G., Antonova O.V., Panfilov P.E., Titov A.N. // Physics of the Solid State. - 2011. - V. 53, l. 5. - P. 1047-1055.

ISSN:
10637834
Type:
Article
Abstract:
The dislocation structure of titanium dichalcogenide single crystals has been investigated. It has been established that the basis of the structure consists of dislocations that lie in the basal plane, are predominantly edge dislocations, and are responsible for the strain behavior of the material. There are also growth dislocations that are predominantly screw dislocations and form dislocation networks. A relationship is revealed between the nature of the chalcogen and the character of the defect structure. © 2011 Pleiades Publishing, Ltd.
Author keywords:
Index keywords:
нет данных
DOI:
10.1134/S1063783411050106
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Другие поля
Поле Значение
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Affiliations Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Sof'i Kovalevskoi 18, Yekaterinburg 620990, Russian Federation
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Correspondence Address Titov, A. N.; Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. Sof'i Kovalevskoi 18, Yekaterinburg 620990, Russian Federation; email: Alexander.titov@usu.ru
Language of Original Document English
Abbreviated Source Title Phys. Solid State
Source Scopus