Memristive effect in a nanotubular layer of anodized titanium dioxide / Vokhmintsev A.S., Weinstein I.A., Kamalov R.V., Dorosheva I.B. // Bulletin of the Russian Academy of Sciences: Physics. - 2014. - V. 78, l. 9. - P. 932-935.

ISSN:

10628738

Type:

Article

Abstract:

A layer of titanium dioxide (TiO2–NT) nanotubes 500 nm thick with average diameters of 60 nm is grown via anodizing. Memristive behavior typical of synthesized Ti/TiO2–NT/Au structures is observed in full cycles of resistive switching, and during the multiple reading of data. Impedance in the states of low (RLRS ≈ 3 Ohm) and high (RHRS ≈ 180 Ohm) resistance are estimated for the obtained memristors. © Allerton Press, Inc., 2014.

Author keywords:

Index keywords:

Oxides; Titanium dioxide; Yarn; Anodized titanium; Average diameter; Full cycles; Memristive behavior; Nanotubular; Resistive switching; Titanium

DOI:

10.3103/S1062873814090317

Смотреть в Scopus:

https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923338549&doi=10.3103%2fS1062873814090317&partnerID=40&md5=f33420a4e68433f888efb8b1f924eb5b

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Link	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84923338549&doi=10.3103%2fS1062873814090317&partnerID=40&md5=f33420a4e68433f888efb8b1f924eb5b
Affiliations	NANOTECH Center, Ural Federal University, Yekaterinburg, Russian Federation
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Publisher	Allerton Press Incorporation
Language of Original Document	English
Abbreviated Source Title	Bull. Russ. Acad. Sci. Phys.
Source	Scopus