Effect of the Fraction of Semiconducting Inclusions on the Properties of Self-Sustained Oscillations in a Metal-Semiconductor System / Melkikh A. V.,Povzner A. A.,Cherepanova A. N. // TECHNICAL PHYSICS. - 2009. - V. 54, l. 11. - P. 1705-1707.

ISSN/EISSN:

1063-7842 / нет данных

Type:

Article

Abstract:

A model of self-sustained oscillations in a heterophase system consisting of metal and semiconductor layers is constructed. It is shown that parameters of self-sustained oscillations (amplitude and period) can be controlled by varying the fraction of metal inclusions in the semiconductor. The numerical solution of the system of equations for the heterophase system shows that, the higher the temperature coefficient of resistance of the metal, the stronger the effect of the metal impurity on the properties of the heterophase system, manifested in a decrease in the effective band gap and in suppression of self-sustained oscillations.

Author keywords:

AUTOOSCILLATIONS

DOI:

10.1134/S1063784209110255

Web of Science ID:

ISI:000272802900025

Соавторы в МНС:

Другие поля

Поле	Значение
Month	NOV
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	AUTOOSCILLATIONS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	mav@dtp.ustu.ru
ResearcherID-Numbers	Povzner, Aleksandr/A-4625-2016
Number-of-Cited-References	4
Usage-Count-Since-2013	1
Journal-ISO	Tech. Phys.
Doc-Delivery-Number	533DN