Contraction of the conducting region in an intrinsic semiconductor due to joule self-heating / Rybakov F. N.,Melkikh A. V.,Povzner A. A. // SEMICONDUCTORS. - 2007. - V. 41, l. 1. - P. 18-21.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

A model of the distribution of the current density and temperature in a semiconductor sample is developed. It is shown that the distribution of the temperature in the sample can have a point of inflection that separates the ``hot{''} and ``cold{''} regions. The location of the point of inflection depends on the current: the larger the current through the sample, the closer to the center of the sample is the point of inflection.

Author keywords:

SYSTEM; MODEL

DOI:

10.1134/S1063782607010058

Web of Science ID:

ISI:000243369600005

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JAN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	SYSTEM; MODEL
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	mav@dpt.ustu.ru
ResearcherID-Numbers	Rybakov, Filipp/K-1916-2013 Povzner, Aleksandr/A-4625-2016
ORCID-Numbers	Rybakov, Filipp/0000-0002-3577-7966
Number-of-Cited-References	12
Usage-Count-Since-2013	1
Journal-ISO	Semiconductors
Doc-Delivery-Number	124LP