A distributed model of the organization of joule-heating-induced autooscillations in a semiconductor / Melkikh AV,Rybakov FN,Povzner AA // TECHNICAL PHYSICS LETTERS. - 2005. - V. 31, l. 8. - P. 706-708.

ISSN/EISSN:

1063-7850 / нет данных

Type:

Article

Abstract:

A model of autooscillations caused by self-heating in a semiconductor is proposed that takes into account the spatial temperature field in a thin-film sample. Dependences of the parameters of autooscillations on the similarity numbers are determined. The obtained relations can be used for controlling autooscillations in thermoresistors. (C) 2005 Pleiades Publishing, Inc.

Author keywords:

нет данных

DOI:

10.1134/1.2035372

Web of Science ID:

ISI:000231683600026

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	mav@dpt.ustu.ru
ResearcherID-Numbers	Povzner, Aleksandr/A-4625-2016 Rybakov, Filipp/K-1916-2013
ORCID-Numbers	Rybakov, Filipp/0000-0002-3577-7966
Number-of-Cited-References	13
Usage-Count-Since-2013	1
Journal-ISO	Tech. Phys. Lett.
Doc-Delivery-Number	961TB