Formation of resistive properties of two-phase semiconductor-metal systems based on FeSi1+x with small deviations from stoichiometry / Povzner AA,Andreeva AG,Sachkov IN,Kryuk VV // TECHNICAL PHYSICS. - 2001. - V. 46, l. 8. - P. 1037-1039.

ISSN/EISSN:

1063-7842 / нет данных

Type:

Article

Abstract:

Using the method of finite elements it has been found that in a two-phase system a semiconductor-metal concentrational transition takes place. Specific features of the dependence on concentration and temperature of the effective electrical conductivity in a FeSi-FeSi2 system are studied in the vicinity of critical concentrations. (C) 2001 MAIK ``Nauka/ Interperiodica{''}.

Author keywords:

нет данных

DOI:

10.1134/1.1395126

Web of Science ID:

ISI:000170171600016

Соавторы в МНС:

Другие поля

Поле	Значение
Publisher	AMER INST PHYSICS
Address	2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
ResearcherID-Numbers	Povzner, Aleksandr/A-4625-2016
Number-of-Cited-References	15
Usage-Count-Last-180-days	2
Usage-Count-Since-2013	7
Journal-ISO	Tech. Phys.
Doc-Delivery-Number	458AT