Spin fluctuations and electronic semiconductor-metal transitions in iron monosilicide / Povzner AA,Volkov AG,Bayankin PV // PHYSICS OF THE SOLID STATE. - 1998. - V. 40, l. 8. - P. 1305-1309.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

This paper discusses the effect of dynamic zero-point and thermal spin-density fluctuations (SDF) on the electronic spectrum of the nearly-ferromagnetic semiconductor FeSi. It is shown that near T=0 degrees zero-point SDF can lead to so much splitting of the electron states of the valence and conduction band that a ``gapless{''} ground state arises. As the temperature increases, the forbidden gap in the spectrum of d electrons first reappears due to suppression of zero-point fluctuations and then disappears again, as the amplitude of thermal spin fluctuations increases. It is these transformations of the electronic spectrum that are the reason for the anomalous changes in the magnetic susceptibility with temperature observed experimentally. (C) 1998 American Institute of Physics. {[}S1063-7834(98)01108-3].

Author keywords:

FESI

DOI:

10.1134/1.1130550

Web of Science ID:

ISI:000075726400011

Соавторы в МНС:

Другие поля

Поле	Значение
Month	AUG
Publisher	AMER INST PHYSICS
Address	CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999 USA
Language	English
Keywords-Plus	FESI
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Volkov, Arkadij/A-1980-2016 Povzner, Aleksandr/A-4625-2016
ORCID-Numbers	Volkov, Arkadij/0000-0002-6698-0238
Number-of-Cited-References	14
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	1
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	116LM