A Rutherford backscattering spectrometry study of Zn implanted BeO single crystals / Yakushev MV,Varaksin AN,Ogorodnikov IN,Kruzhalov AV // RADIATION EFFECTS AND DEFECTS IN SOLIDS. - 1999. - V. 150, l. 1-4. - P. 157-160.

ISSN/EISSN:

1042-0150 / нет данных

Type:

Article; Proceedings Paper

Abstract:

A single crystal of BeO was implanted with 10(15) cm(-2) of 70 keV Zn+ at room temperature and then annealed in air for 2 h at 500 degrees C and then for 2 h at 1000 degrees C. Rutherford backscattering/channelling technique (RBS/C) was used to study lattice location of Zn atoms. As-implanted Zn took two regular positions: the first site was on the string {[}0001], probably substituting Be, the second was an interstitial, near the string. After annealing at 500 degrees C a fraction of the implanted zinc atoms remained on the string. The second site moved into the centre of the channel. This position can be the octahedral void. Annealing at 1000 degrees C increases the fraction of Zn in the octahedral voids.

Author keywords:

ion-implantation; RBS/channelling; computer simulation; BeO; Zn

DOI:

10.1080/10420159908226223

Web of Science ID:

ISI:000088130800025

Соавторы в МНС:

Другие поля

Поле	Значение
Note	8th Europhysical Conference on Defects in Insulating Materials (EURODIM98), UNIV KEELE, KEELE, ENGLAND, JUL 06-11, 1998
Publisher	GORDON BREACH SCI PUBL LTD
Address	C/O STBS LTD, PO BOX 90, READING RG1 8JL, BERKS, ENGLAND
Language	English
Research-Areas	Nuclear Science \& Technology; Physics
Web-of-Science-Categories	Nuclear Science \& Technology; Physics, Fluids \& Plasmas; Physics, Condensed Matter
ResearcherID-Numbers	Ogorodnikov, Igor/B-4162-2011
ORCID-Numbers	Ogorodnikov, Igor/0000-0002-4700-2340
Number-of-Cited-References	5
Journal-ISO	Radiat. Eff. Defects Solids
Doc-Delivery-Number	333LB