Charge state of a transition metal impurity in II-VI semiconductors / Lukoyanov AV,Nekrasov IA,Sokolov VI,Anisimov VI // PHYSICS OF THE SOLID STATE. - 2005. - V. 47, l. 8. - P. 1560-1562.

ISSN/EISSN:

1063-7834 / 1090-6460

Type:

Article; Proceedings Paper

Abstract:

The results of calculating the electronic structure of semiconductor compounds A(II)B(VI) : 3d (A = Zn; B = S, Se, Te; 3d = Sc-Cu) at a low content of 3d impurities are discussed. The excess charge of an impurity ion with respect to the charge of the zinc ion is determined for the whole series of 3d impurities. It is found that the excess charge gradually varies from +0.6 vertical bar e vertical bar for the scandium impurity to -0.2 vertical bar e vertical bar for the copper impurity. Photoionization of an impurity ion is simulated by adding a hole or an electron to the impurity center. The added charge is redistributed between the impurity ion and its nearest neighbors, thus decreasing or increasing the total excess charge of the impurity center by a magnitude of similar to 0.2 vertical bar e vertical bar. (c) 2005 Pleiades Publishing, Inc.

Author keywords:

NICKEL; ZNSE; ZNO

DOI:

10.1134/1.2014515

Web of Science ID:

ISI:000231127400040

Соавторы в МНС:

Другие поля

Поле	Значение
Note	12th Feofilov Workshop on Spectroscopy of Crystal Activated by Rare-Earth and Transition-Metal Ions, Ekaterinburg, RUSSIA, SEP 22-25, 2004
Organization	Russian Fdn Basic Res; Int Assoc European Comm; Russian Acad Sci, Dept Phys Sci
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
EISSN	1090-6460
Keywords-Plus	NICKEL; ZNSE; ZNO
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	lukoyanov@optics.imp.uran.ru
ResearcherID-Numbers	Lukoyanov, Alexey/J-8069-2013 Sokolov, Viktor/J-9376-2013 Anisimov, Vladimir/K-1235-2013
ORCID-Numbers	Lukoyanov, Alexey/0000-0003-4459-0893 Sokolov, Viktor/0000-0002-6252-8914 Anisimov, Vladimir/0000-0002-1087-1956 Nekrasov, Igor/0000-0002-0845-1100
Number-of-Cited-References	16
Usage-Count-Since-2013	6
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	954AV