Toward Ferroelectric Control of Monolayer MoS2 / Nguyen Ariana,Sharma Pankaj,Scott Thomas,Preciado Edwin,Klee Velveth,Sun Dezheng,Lu I-Hsi (Daniel),Barroso David,Kim SukHyun,Shur Vladimir Ya,Akhmatkhanov Andrey R.,Gruverman Alexei,Bartels Ludwig,Dowben Peter A. // NANO LETTERS. - 2015. - V. 15, l. 5. - P. 3364-3369.

ISSN/EISSN:

1530-6984 / 1530-6992

Type:

Article

Abstract:

The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized ``up{''} with respect to the surface So that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the ``up{''} domains, while slightly,quenching the surface polarization on the ``down{''} domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on he domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility, for ferroelectric nonvolatile gating of transition Metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.

Author keywords:

CVD growth on oxides; selective area growth; transition metal dichalcogenides on ferroelectrics; ferroelectric surface polarization FIELD-EFFECT TRANSISTORS; SCANNING FORCE MICROSCOPY; HIGH-QUALITY MONOLAYER; MOLYBDENUM-DISULFIDE; LITHIUM-NIOBATE; THIN-FILMS; LINBO3; NANOSCALE; SURFACES; GRAPHENE

DOI:

10.1021/acs.nanolett.5b00687

Web of Science ID:

ISI:000354906000088

Соавторы в МНС:

Другие поля

Поле	Значение
Month	MAY
Publisher	AMER CHEMICAL SOC
Address	1155 16TH ST, NW, WASHINGTON, DC 20036 USA
Language	English
EISSN	1530-6992
Keywords-Plus	FIELD-EFFECT TRANSISTORS; SCANNING FORCE MICROSCOPY; HIGH-QUALITY MONOLAYER; MOLYBDENUM-DISULFIDE; LITHIUM-NIOBATE; THIN-FILMS; LINBO3; NANOSCALE; SURFACES; GRAPHENE
Research-Areas	Chemistry; Science \& Technology - Other Topics; Materials Science; Physics
Web-of-Science-Categories	Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience \& Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter
Author-Email	agruverman2@unl.edu bartels@ucr.edu pdowben@unl.edu
ResearcherID-Numbers	Akhmatkhanov, Andrei/A-8072-2010 Shur, Vladimir/J-9078-2015
ORCID-Numbers	Akhmatkhanov, Andrei/0000-0002-2802-9134
Funding-Acknowledgement	Ministry of Education and Science of the Russian Federation {[}UID RFMEFI59414X001]; Russian Science Foundation {[}14-12-00826]; Air Force Office of Scientific Research {[}FA9550-14-1-0268]; Semiconductor Research Corporation through C-SPIN {[}SRC 2381.002, 2381.003, SRC 2398.002]; National Science Foundation {[}DMR- 1449601, DMR-1420645, DGE-1326120]
Funding-Text	Semiconductor Research Corporation through C-SPIN: SRC 2381.002 and 2381.003 Semiconductor Research Corporation Nanoelectronics Research Initiative (NRI) to the Center for NanoFerroic Devices (CNFD) SRC 2398.002 Defense Advanced Research Projects Agency (DARPA). The Ministry of Education and Science of the Russian Federation (Contract UID RFMEFI59414X001) and the Russian Science Foundation (Grant 14-12-00826). The National Science Foundation:. DMR- 1449601, DMR-1420645, and DGE-1326120. The Air Force Office of Scientific Research: grant FA9550-14-1-0268. The Air Force Office of Scientific Research: grant FA9550-14-1-0268.
Number-of-Cited-References	55
Usage-Count-Last-180-days	19
Usage-Count-Since-2013	200
Journal-ISO	Nano Lett.
Doc-Delivery-Number	CI6WX