Unusual x-ray excited luminescence spectra of NiO suggest self-trapping of the d-d charge-transfer exciton / Sokolov V. I.,Pustovarov V. A.,Churmanov V. N.,Ivanov V. Yu.,Gruzdev N. B.,Sokolov P. S.,Baranov A. N.,Moskvin A. S. // PHYSICAL REVIEW B. - 2012. - V. 86, l. 11.

ISSN/EISSN:

2469-9950 / 2469-9969

Type:

Article

Abstract:

Luminescence spectra of NiO have been investigated under vacuum ultraviolet (VUV) and soft x-ray (XUV) excitation (DESY, Hamburg). Photoluminescence (PL) spectra show broad emission violet and green bands centered at about 3.2 and 2.6 eV, respectively. The PL excitation (PLE) spectral evolution and lifetime measurements reveal that the two mechanisms with short and long decay times, attributed to the d(e(g))-d(e(g)) and p(pi)-d charge transfer (CT) transitions in the range 4-6 eV, respectively, are responsible for the observed emissions. The XUV excitation makes it possible to avoid the predominant role of the surface effects in luminescence and reveals a bulk violet luminescence with a puzzling well-isolated doublet of very narrow lines. These lines with close energies near 3.3 eV are attributed to recombination transitions in the self-trapped d-d CT excitons formed by the coupled Jahn-Teller Ni+ and Ni3+ centers. The conclusion is supported by a comparative analysis of the luminescence spectra for NiO and solid solution NixZn1-xO and by a comprehensive cluster model assignment of different p-d and d-d CT transitions and their relaxation channels. Our paper shows that the time-resolved luminescence measurements provide an instructive tool for the elucidation of the p-d and d-d CT excitations and their relaxation in 3d oxides.

Author keywords:

ELECTRONIC-STRUCTURE; OPTICAL PROPERTIES; ELECTROREFLECTANCE; SEMICONDUCTORS; EXCITATIONS; IMPURITIES; OXIDES

DOI:

10.1103/PhysRevB.86.115128

Web of Science ID:

ISI:000309173300002

Соавторы в МНС:

Другие поля

Поле	Значение
Month	SEP 20
Publisher	AMER PHYSICAL SOC
Address	ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
Language	English
Article-Number	115128
EISSN	2469-9969
Keywords-Plus	ELECTRONIC-STRUCTURE; OPTICAL PROPERTIES; ELECTROREFLECTANCE; SEMICONDUCTORS; EXCITATIONS; IMPURITIES; OXIDES
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Sokolov, Viktor/J-9376-2013 Sokolov, Petr/E-8376-2011 Baranov, Andrey/E-1424-2012 Gruzdev, Nikita/J-9311-2013
ORCID-Numbers	Sokolov, Viktor/0000-0002-6252-8914 Sokolov, Petr/0000-0003-3516-3953 Gruzdev, Nikita/0000-0001-7563-6685
Funding-Acknowledgement	HASYLAB (DESY) {[}II-20080019, I-20110050]; Ural Branch of RAS {[}12-U-2-1030]; RFBR {[}10-02-96032, 12-02-01039]
Funding-Text	The authors are grateful to R. V. Pisarev, V. I. Anisimov, and A. V. Lukoyanov for discussions. Portions of this research were carried out at the HASYLAB (DESY), Projects No. II-20080019 and No. I-20110050 (SUPERLUMI station, beamline I). We would like to thank M. Kirm, Anthony M. T. Bell, and Edmund Welter for help with the BW3, B2, and A1 experiments. Anthony M. T. Bell and V. Guzikova are gratefully acknowledged for corrections to the English. This work was partially supported by the Ural Branch of RAS (Grant No. 12-U-2-1030) and RFBR Grants No. 10-02-96032 and No. 12-02-01039 (A.S.M.).
Number-of-Cited-References	37
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	48
Journal-ISO	Phys. Rev. B
Doc-Delivery-Number	011OA