Low-temperature photoluminescence of ion-implanted SiO2:Sn+ films and glasses / Zatsepin A. F.,Buntov E. A.,Kortov V. S.,Pustovarov V. A.,Fitting H. -J.,Schmidt B.,Gavrilov N. V. // JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES. - 2012. - V. 6, l. 4. - P. 668-672.

ISSN/EISSN:

1027-4510 / нет данных

Type:

Article

Abstract:

Low-temperature photoluminescence spectroscopy with pulsed synchrotron excitation is applied to study the regularities of excitation and relaxation of both point defects and nanoparticles formed by tin implantation into SiO2 films and glasses. It has been found that tin implantation followed by air and nitrogen annealing yields the formation of alpha-Sn nanoclusters and nonstoichiometric SnO (x) nanoparticles, while a stable phase of SnO2 does not appear. Alternative channels of luminescence excitation are revealed for nanoclusters, including energy transfer from excitons and electron-hole pairs of the host SiO2 matrix.

Author keywords:

AMORPHOUS-SILICON DIOXIDE; NANOPARTICLES; NANOCLUSTERS; GRATINGS; CENTERS; SPECTRA; FIBERS; LAYERS; SNO2

DOI:

10.1134/S1027451012080198

Web of Science ID:

ISI:000307342700022

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	AMORPHOUS-SILICON DIOXIDE; NANOPARTICLES; NANOCLUSTERS; GRATINGS; CENTERS; SPECTRA; FIBERS; LAYERS; SNO2
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
ResearcherID-Numbers	Buntov, Evgeny/F-8760-2010 Zatsepin, Anatoly/L-7335-2016
ORCID-Numbers	Buntov, Evgeny/0000-0003-3255-9039 Zatsepin, Anatoly/0000-0001-9539-2403 Gavrilov, Nikolai/0000-0003-1542-0107
Number-of-Cited-References	27
Usage-Count-Last-180-days	1
Usage-Count-Since-2013	17
Journal-ISO	J. Surf. Ingestig.-X-Ray Synchro.
Doc-Delivery-Number	986LI