Localized Electronic Excitations in Crystalline Phenacite Be2SiO4 / Zatsepin A. F.,Kukharenko A. I.,Pustovarov V. A.,Yakovlev V. Yu.,Cholakh S. O. // PHYSICS OF THE SOLID STATE. - 2009. - V. 51, l. 3. - P. 465-473.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

The results of coordinated spectroscopic studies of the nature and properties of electronic excitations localized at regular and defect sites of the Be2SiO4 lattice are presented. The methods employed are electron-beam-excited pulsed absorption spectroscopy, pulsed cathodoluminescence, and low-temperature VUV spectroscopy with selective excitation by synchrotron radiation. The bands in luminescence spectra of Be2SiO4 at 2.70 and 3.15 eV are assigned to {[}AlO4](5-) and {[}SiO4](4-) centers formed both in direct relaxation of electronic excitations at defect levels and through the formation of exciton-defect complexes. Disruptions of beryllium oxygen bonds (short-lived defects in the form of beryllium vacancies V-Be(-)) are considered as initiating the formation of optically active centers with characteristic absorption bands in the range 1.5-4.0 eV. The intrinsic luminescence of the Be2SiO4 crystal at 3.6 and 4.1 eV is attributed to radiative decay of self-trapped excitons of two types. A mechanism of exciton self-trapping at the {[}SiO4] and {[}BeO4] tetrahedral groups is proposed, which involves excitation transfer from a threefold-coordinated oxygen atom to neighboring silicon or beryllium atoms.

Author keywords:

PHENAKITE BE2SIO4; LUMINESCENCE; BEAL2O4; QUARTZ; EPR; BEO

DOI:

10.1134/S1063783409030044

Web of Science ID:

ISI:000264105000004

Соавторы в МНС:

Другие поля

Поле	Значение
Month	MAR
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	PHENAKITE BE2SIO4; LUMINESCENCE; BEAL2O4; QUARTZ; EPR; BEO
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	zats@dpt.ustu.ru
ResearcherID-Numbers	Cholakh, Seif/M-8221-2016 Kukharenko, Andrey/M-8256-2016 Zatsepin, Dmitry/F-5520-2012 Yakovlev, Victor/P-4197-2015 Zatsepin, Anatoly/L-7335-2016
ORCID-Numbers	Cholakh, Seif/0000-0002-9313-6614 Kukharenko, Andrey/0000-0003-3774-6909 Zatsepin, Anatoly/0000-0001-9539-2403
Funding-Acknowledgement	Russian Foundation for Basic Research {[}07-02-12015-ofi, 08-02-01072]
Funding-Text	This study was supported by the Russian Foundation for Basic Research (project nos. 07-02-12015-ofi and 08-02-01072).
Number-of-Cited-References	31
Usage-Count-Since-2013	7
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	417UW