Phase transformations in II-V semiconductors under high pressure / Mollaev A. Yu.,Saypulaeva L. A.,Alibekov A. G.,Marenkin S. F.,Babushkin A. N. // SEMICONDUCTORS. - 2009. - V. 43, l. 6. - P. 701-705.

ISSN/EISSN:

1063-7826 / нет данных

Type:

Article

Abstract:

The resistivity and Hall coefficient in n-CdAs(2) and p-ZnAs(2) are measured at room temperature under a hydrostatic pressure as high as 9 GPa and quasi-hydrostatic pressure as high as 50 GPa. For n-CdAs(2), the phase transition is found at P = 5.5 GPa, and for p-ZnAs(2), two phase transitions take place; the first at P = 10-15 GPa, and the second at P = 35-40 GPa.

Author keywords:

SOLIDS

DOI:

10.1134/S1063782609060025

Web of Science ID:

ISI:000266824800002

Соавторы в МНС:

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Другие поля

Поле	Значение
Month	JUN
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	SOLIDS
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	a.mollaev@mail.ru
ResearcherID-Numbers	Marenkin, Sergey/N-4256-2015 Babushkin, Alexey/M-8198-2016
Number-of-Cited-References	15
Usage-Count-Since-2013	8
Journal-ISO	Semiconductors
Doc-Delivery-Number	456EV