Electrical properties of the chalcogenides AgGeAsS3xSe3(1-x) (0.1 <= x <= 0.9) / Kheifets O. L.,Babushkin A. N.,Shabashova O. A.,Melnikova N. V. // LOW TEMPERATURE PHYSICS. - 2007. - V. 33, l. 2-3. - P. 280-282.

ISSN/EISSN:

1063-777X / нет данных

Type:

Article; Proceedings Paper

Abstract:

The chalcogenides AgGeAsS3xSe3(1-x) (x=0.9-0.9) are synthesized and their electrical properties are investigated at low temperatures. The synthesized materials, which are ionic conductors, are studied by the method of impedance spectroscopy. Temperature intervals are found in which the conductivity and dielectric constant of the materials exhibit singular behavior.

Author keywords:

нет данных

DOI:

10.1063/1.2719968

Web of Science ID:

ISI:000245900300030

Соавторы в МНС:

Другие поля

Поле	Значение
Month	FEB-MAR
Note	16th Ural International Winter School on Pysics of Semiconductors, Kyshtym, RUSSIA, FEB 27-MAR 04, 2006
Organization	Russian Acad Sci, Inst Met Phys, Ural Div
Publisher	AMER INST PHYSICS
Address	CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA
Language	English
Research-Areas	Physics
Web-of-Science-Categories	Physics, Applied
Author-Email	olga.kobeleva@usu.ru
ResearcherID-Numbers	Babushkin, Alexey/M-8198-2016 Melnikova, Nina/B-1601-2014
Number-of-Cited-References	9
Usage-Count-Since-2013	14
Journal-ISO	Low Temp. Phys.
Doc-Delivery-Number	159XE