Charge transport mechanism in intercalated Cu (x) HfSe2 compounds / Pleshchev V. G.,Baranov N. V.,Melnikova N. V.,Selezneva N. V. // PHYSICS OF THE SOLID STATE. - 2012. - V. 54, l. 7. - P. 1348-1352.

ISSN/EISSN:

1063-7834 / нет данных

Type:

Article

Abstract:

Alternating current resistivity measurements have been performed for the first time on intercalated Cu (x) HfSe2 (0 a parts per thousand currency sign x a parts per thousand currency sign 0.18) samples using the impedance spectroscopy technique together with direct current measurements. The results obtained indicate the hopping mechanism of charge transport in Cu (x) HfSe2 compounds. It has been found that an increase in the copper content in samples enhances relaxation processes. The ac conductivity exhibits frequency dispersion described by the universal dynamic response.

Author keywords:

ELECTRICAL-PROPERTIES; MAGNETIC-PROPERTIES; SYSTEM; TRANSITION; TIS2; NI

DOI:

10.1134/S1063783412070293

Web of Science ID:

ISI:000306069200006

Соавторы в МНС:

Другие поля

Поле	Значение
Month	JUL
Publisher	MAIK NAUKA/INTERPERIODICA/SPRINGER
Address	233 SPRING ST, NEW YORK, NY 10013-1578 USA
Language	English
Keywords-Plus	ELECTRICAL-PROPERTIES; MAGNETIC-PROPERTIES; SYSTEM; TRANSITION; TIS2; NI
Research-Areas	Physics
Web-of-Science-Categories	Physics, Condensed Matter
Author-Email	Valery.Pleschov@usu.ru
ResearcherID-Numbers	Melnikova, Nina/B-1601-2014 Baranov, Nikolai/J-5042-2013
ORCID-Numbers	Baranov, Nikolai/0000-0002-9720-5314
Number-of-Cited-References	25
Usage-Count-Last-180-days	3
Usage-Count-Since-2013	26
Journal-ISO	Phys. Solid State
Doc-Delivery-Number	969PZ